Inversion of the direction of photo-induced mass transport in As20Se80 films: Experiment and theory

Kaganovskii, Yu.; Beke, Dezső L.; Charnovych, S.; Kökényesi, S.; Trunov, M. L.

doi:10.1063/1.3636392

Cited by 37 publications

(10 citation statements)

References 20 publications

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“…This means that the valleys are softer than the peaks, which can be explained by the photostructural transformations during the fabrication of the grating. Upon illumination, the structural deformation of the surface is caused by lateral mass transfer from the dark to the illuminated areas [21,22]. The accumulation of the material in the peaks and, in the same time, the lack of the material in the valleys may cause local density and hardness increase/decrease along the surface.…”

Section: Results and Discussion 51 Determination Of Young's Modulusmentioning

confidence: 99%

Young’s Modulus and Energy Dissipation Determination Methods by AFM, with Particular Reference to a Chalcogenide Thin Film

Kámán

2015

Period. Polytech. Elec. Eng. Comp. Sci.

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There are two main ways to investigate mechanical properties by atomic force microscopy (AFM): force curve measuring and tapping-mode phase mapping. This paper provides an overview of these techniques with special regards to the determination of Young's modulus from force curves and the calculation of tip-sample energy dissipation from phase maps. Besides, both methods were used to study the mechanical properties of amorphous chalcogenide thin film samples. As 20 Se 80 thin film was prepared by thermal evaporation on a glass substrate and a He-Ne laser (633 nm) was used to prepare a holographic grating on the thin film. The obtained results showed significant difference in the Young's modulus between the peaks and the valleys and contrast was also observed on the dissipation map which can be connected to the variation of mechanical properties in accordance with the grating.

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Section: Results and Discussion 51 Determination Of Young's Modulusmentioning

confidence: 99%

Young’s Modulus and Energy Dissipation Determination Methods by AFM, with Particular Reference to a Chalcogenide Thin Film

Kámán

2015

Period. Polytech. Elec. Eng. Comp. Sci.

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“…Respectively, the local (nano‐sized) areas of the matrix of a film, which covers nanoparticles, must be excited due to the generation of carriers in the case where the wavelength of the SPR is in the spectral range, where the absorption edge of a chalcogenide film is located. As is known, the generation of electron‐hole pairs at the excitation of the energy gap is a general component of the mechanism of the processes of mass transport in chalcogenide films . A local increase in the electric field causes a significant enhancement of the mass transport effectiveness of the substance of a film on the nanoscale .…”

Section: Use Of Near‐field Probes For the Exposure Of The Thin Films mentioning

confidence: 99%

Formation of Nanoscale Structures on Chalcogenide Films

Kryuchyn

Petrov

Рубіш

et al. 2017

Physica Status Solidi (b)

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Thin films of chalcogenide vitreous semiconductors are characterized by a much higher resolving power than that of conventional optical focusing systems. The key interest is focused on the formation of elements with sizes significantly less than the values determined by the light diffraction limit. This process can be realized by using the nonlinear exposure characteristics of chalcogenide glass semiconductor films and a modification of their structure for the localization of exposing light to dimensions below the diffraction-limited area. Appropriate conditions can be created by using the excitation of the plasmon resonance in nanoparticles of noble metals embedded into the chalcogenide glass semiconductor matrix. Near-field methods of exposure by optical radiation open wide opportunities to produce nanoscale structures on the surface of chalcogenide glass semiconductors. The base limitation for the use of these systems is a low optical transmission, which leads to a slow exposure ($100 μm per second). The transmission of near-field probes can be sufficiently increased by fabricating these probes in the form of microstrip structures.

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“…Our results show that photo-induced volume changes and the possibility of direct surface relief recording due to the mass transport in Ge-Se system under the gradient intensity of illumination demonstrate the potential of these materials for fabrication of photonic elements, as it was investigated and presented for As-Se and As-S layer structures [6][7][8]13,[36][37][38][39]43,44].…”

Section: Raman Spectroscopic Investigationsmentioning

confidence: 99%

“…This class of material exhibits well known photo-induced structural transformation effects of the amorphous phase and related changes of optical parameters (absorption coefficient, refractive index) under the influence of photons with energy close to the band gap (E g ) energy [1][2][3]. Some peculiar effects like photo-plasticity or photo-fluidity [4,5], photo-stimulated expansion or contraction and mass-transport [3,6,7] were also observed and can be used for optical amplitudephase relief recording. For the As-Se system for example, the character and magnitude of such effects are known as essentially dependent on the composition [8].…”

Section: Introductionmentioning

confidence: 99%

Surface patterning in Ge Se amorphous layers

Csarnovics

Vereš

Němec

et al. 2017

Journal of Non-Crystalline Solids

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Laser-induced surface relief patterns were performed in Ge-Se amorphous layers.Compositional and fabrication method dependences on recording were established.Modulation depth of the created structures increases with increasing Se content.Advantage of pulsed laser deposition in comparison to thermal evaporation is shown.Thermal annealing has essential influence on the pattering parameters. AbstractCompositional and fabrication method dependences of laser-induced geometrical surface relief formation in Ge-Se amorphous layers were investigated with the aim to determine the possible role of initial conditions in the mechanism and efficiency of optical recording. The results show that pulsed laser deposition has some advantages in composition preservation and surface relief formation in comparison with thermal evaporation for producing layers with high sensitivity and efficiency of surface relief grating formation, especially in layers with Ge 24 Se 76 composition. It was shown that modulation depth of the created surface structures increases with increasing Se content in Ge-Se amorphous chalcogenide layers. Thermal annealing has essential influence on the recording parameters, enabling additional insight into the possible mechanisms of light induced surface patterning in this type of light-sensitive amorphous chalcogenides. Raman spectroscopy was used to identify local structure of produced surface patterns.

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Inversion of the direction of photo-induced mass transport in As20Se80 films: Experiment and theory

Cited by 37 publications

References 20 publications

Young’s Modulus and Energy Dissipation Determination Methods by AFM, with Particular Reference to a Chalcogenide Thin Film

Young’s Modulus and Energy Dissipation Determination Methods by AFM, with Particular Reference to a Chalcogenide Thin Film

Formation of Nanoscale Structures on Chalcogenide Films

Surface patterning in Ge Se amorphous layers

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