2021
DOI: 10.53297/18293395-2021.1-72
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Investigating the Impact of an External Influence on the Dynamic Behavior of Dislocations in Silicon Crystals

Abstract: The results of studying of the influence of a constant magnetic field on the dynamic behavior of dislocations in the crystalline block of an interferometer subsequently subjected to uniaxial mechanical tensile stress along the crystallographic axis of silicon are presented. The periodicity of the dilatation moire image after these influences, the average means free path of a dislocation in a crystal (block), the amount of slip, the average density of dislocations along the slip line, the relative deformation, … Show more

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