2009
DOI: 10.3233/ica-2009-0310
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Investigation and a practical compact network model of thermal stress in integrated circuits

Abstract: This paper first investigates the non-uniform spatial thermal distribution in sub-100nm integrated circuits. A practical network-based Compact Thermal Modeling (CTM) technique has been proposed to model this thermal stress. The proposed technique, which can be integrated with modern CAD tools, represents IC package as a network in which a set of boundary nodes serve as surrogates for physical regions of the chip. In this network a junction node represents the chip's power junction, and arcs permit thermal comm… Show more

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Cited by 7 publications
(4 citation statements)
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“…Compact model is a critical step in the design cycle of modern IC products [26]. It refers to the development of models for integrated semiconductor devices for use in circuit simulations.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Compact model is a critical step in the design cycle of modern IC products [26]. It refers to the development of models for integrated semiconductor devices for use in circuit simulations.…”
Section: Introductionmentioning
confidence: 99%
“…Compact model is a critical step in the design cycle of modern IC products. [26] It refers to the development of models for integrated semiconductor devices for use in circuit simulations. The models are used to reproduce device terminal behaviors with accuracy, computational efficiency, ease of parameter extraction, and relative model simplicity for a circuit or system-level simulation, for future technology nodes.…”
Section: Introductionmentioning
confidence: 99%
“…Along with the experimental research, semiconductor-based FET modeling and simulation serve as a bridge between manufacturers and designers [ 179 , 180 ] and provide essential tools to explore the fundamental properties of 2D TMDCs for the device applications [ 181 ]. Various softwares (such as PHILIPAC, SLIC, and SPICE) are available to model and investigate the devices [ 182 , 183 ].…”
Section: Field-effect Transistorsmentioning
confidence: 99%
“…Otherwise, for ensuring the reliability of the simulation, the device model should also be able to accurately describe the physical properties [ 21 ]. Compact model is a critical step in the design cycle of modern IC products [ 22 ]. It refers to the development of models for integrated semiconductor devices for use in circuit simulations.…”
Section: Introductionmentioning
confidence: 99%