Investigation into MoTe2 Based Dielectric Modulated AMFET Biosensor for Label-Free Detection of DNA Including Electric Variational Effects

Abstract

Due to limitations of Silicon, Transition metal dichalcogenides (TMD) based biosensors are popular in the recent times. In TMD family, Molybdenum telluride (MoTe2) is being studied a lot for different biosensing application. However, for DNA detection using TMD based DMFET, the effect of the electrical variations in DNA has not been studied before. Also, the impact of DNA-Electrode interaction on transducer level of DMFET is yet to be studied. In this article, we have proposed a Molybdenum telluride (MoTe2) based Accumulation Mode Field Effect Transistor (AMFET) for possible dielectric modulated biosensing application. The study is focused on DNA detection including the electric variations of DNA due to surface interaction. We have done a circuit level analysis of the proposed structure for having deeper insights into its performance under various DNA orientations in the nanogap. We have also presented a benchmarking to highlight the superior sensitivity of the proposed structure (ΔVth = 700mV at K =8). The impact of back-gate bias is also included. We have obtained signi cant variation of threshold voltage shift for different orientation in the proposed structure suggesting strong impact of electrical variations in DNA in biosensing performance of MoTe2 AMFET.

MoTe2 Field-Effect Transistor for the Rapid Detection of Streptavidin via Engineered Support Construct

“…However, due to low-Fermilevel pinning and moderate band gap, molybdenum ditelluride (α-MoTe 2 )-based devices have received significant scientific attention for electronic and optoelectronics applications. Particularly, in recent research projects related to biosensor applications, molybdenum ditelluride (MoTe 2 ) has been utilized for DNA detection 23 and glucose detection. 24 Here, a few layers of thin MoTe 2 flakes were used to fabricate 2D-FET biosensors for the detection of the streptavidin protein.…”

Noise analysis of MoTe2-based dual-cavity MOSFET as a pH sensor

“…Extensive research has been conducted to improve this limit by suitably choosing: (a) an advanced device structure, (b) channel material, (c) topology, and (d) biasing conditions. Architectures like silicon on insulator (SOI) dual gate FET [18], floating gate [19], SOI FET [20], junctionless FET [21], negative capacitance [22], tunnel FET [23], trench gate [24] and others [25][26][27] have been proposed to achieve a higher sensitivity. Among these, junctionless ISFET (n-n-n or p-p-p) has attracted much attention because of their low thermal budget and manufacturing simplicity by avoiding source-channel-drain abrupt junctions [20,28,29].…”

“…It is observed that MoTe 2 is the sole TMD material that has a silicon-like bandgap and can be grown in semiconducting (2 H) as well as metallic (1 T ′ ) phases [34]. Moreover, MoTe 2 -based devices offer low thermal conductivity and lower subthreshold swing (SS) with a high on/off current ratio [21]. As a sensor, MoTe 2 devices exhibited high sensitivity with a significantly improved recovery rate as reported by Feng et al [35].…”

Inverse design of a high‐quality factor multi‐purpose optical biosensor

“…Accordingly, there are two main optical ways for sensing goals. The first method is fluorescence detection, and the second is label-free detection [5][6][7]. Label-free detection is one of the cheapest and easiest methods based on Photonic sensors containing dielectric materials providing precise responses with a high-quality (Q) factor output transmittance spectrum.…”