Investigation into the effect of Auger recombination on charge carrier transport and static characteristics of silicon multilayer structures

Transport phenomena in intrinsic semiconductors and insulators at high current densities: Suppression of the broken neutrality drift

“…13 This software has repeatedly been used successfully to describe the static and transient processes in the diode and thyristor structures based on Si and SiC. 14,15 The numerical experiment consisted of two phases. In the first stage, the carrier distribution along the base region of silicon p þ -i-n þ structures was analyzed at different current densities.…”

“…According to (14) and (17), j H and j T are determined by different parameters of the structure. This suggests that these values are independent, which makes it easy to find the neutrality violation conditions.…”

10.1007/s11453-008-2019-4

“…By contrast, U pn , determined by the boundary concentrations p(0) and p(W) along with U L , governed by the carrier distribution p(x) across the base layer, change markedly. According to [12,13], p(0) has the form (2) where j 0 = ; j C = j 0 ; p C = ; C = C n + C p is the ambipolar AR constant; L = , the ambipolar diffusion length; and j sn , the saturation current of the p + -emitter. p(W) is described by expression (2), with the substitutions j sn ⇒ j sp and j 0 ⇒ bj 0 , where j sp is the saturation current of the n + -emitter.…”

“…p(W) is described by expression (2), with the substitutions j sn ⇒ j sp and j 0 ⇒ bj 0 , where j sp is the saturation current of the n + -emitter. According to [12,13], U L can be written as…”

“…In the opposite case, when the AR contribution is important, it follows from (3) that [12,13] (8) and (9)…”