Investigation of a Class-J Mode Power Amplifier in Presence of a Second-Harmonic Voltage at the Gate Node of the Transistor

Alizadeh, Amirreza; Medi, Ali

doi:10.1109/tmtt.2017.2666145

Cited by 38 publications

(15 citation statements)

References 19 publications

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“…The small difference is mainly due to the following two reasons: First of all, the finite saturation resistance (R ds ) and non-linear shunt capacitance of the real device have some influence on the waveforms [18]. Secondly, since the complexity of the circuit is also significant, the neglect of the third harmonic and higher harmonics also causes the waveforms to change partly [19,20].…”

Section: Implementation and Measurementsmentioning

confidence: 99%

Highly efficient broadband class‐J power amplifier using modified multisection quarter‐wave lines and short‐circuited stubs

Liu

Cheng

2019

IET Microwaves, Antennas & Propagation

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This study presents a broadband and high‐efficiency Class‐J power amplifier (PA)‐based on a modified multisection quarter‐wave lines and short‐circuited stubs matching network (MN). It is noted that the modified structure, with good design convenience and great frequency selectivity, especially in the roll‐off region between the highest frequency of the desired band (fH) and second harmonic of the lowest frequency of the band (2fL), is for the first time employed to design PAs with more optimal performance and greater bandwidths (BWs). A step‐by‐step design procedure of the proposed structure is presented. Experimental results show that using a 10‐W Wolfspeed GaN HEMT device, a highly efficient broadband Class‐J PA is realised from 1.4 to 2.4 GHz (fractional BW = 52.6%) with measured drain efficiency of 63.0–68.9% and output power of 39.8–40.3 dBm.

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Section: Implementation and Measurementsmentioning

confidence: 99%

Highly efficient broadband class‐J power amplifier using modified multisection quarter‐wave lines and short‐circuited stubs

Liu

Cheng

2019

IET Microwaves, Antennas & Propagation

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“…The purpose of phase linearizer is to ensure linearity specification is achieved across 700 to 800 MHz which encapsulates LTE Band 12,13,14,17,20,27,28,29,44,67,68 and 85 and 5G Band which is n28. As quantified in [53], an AM-PM distortion of 5 • or more results in gain compression degradation of 1 dB or more.…”

Section: Linearizer Circuit Designmentioning

confidence: 99%

“…The efficiency of the amplifier can be optimized through the waveform shaping of the voltage and current by minimizing the overlap between the two waveforms. This will reduce the power dissipation in the transistor [17]. Additional factor that causes efficiency degradation is the mismatch in the fundamental, 2 nd harmonic and 3 rd harmonic reactance due to highly volatile narrowband matching.…”

Section: Introductionmentioning

confidence: 99%

A 0.8 mm² Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power

et al. 2019

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This paper presents a comprehensive design of a fully integrated multistage GaAs HBT power amplifier that achieves both linearity and high efficiency within a chip area of 0.855 mm 2 for 4G and 5G applications covering the lower frequency band of 700-800 MHz. A novel linearizer circuit is integrated to a dual stage class-AB PA to minimize the AM-PM (Amplitude Modulation-Phase Modulation) distortion generated by the parasitic capacitance at the PN-junction under low bias current condition. The linearized power amplifier is able to operate within a 100 MHz linear operating bandwidth (700-800 MHz) while meeting the adjacent channel leakage ratio (ACLR) specification for 4G and 5G application. The fully integrated PA achieves a wideband efficiency of 57.5% at 28.5 dBm output power. Observing a respective input and output return losses of less than 13 dB and 10 dB, the PA delivers a power gain within the range of 34.0-37.0 dB across the operating bandwidth while exhibiting an unconditional stability characteristic from DC up to 5 GHz. The proposed linearization method paves the way of reducing the complexity of linear and high efficiency PA design which is associated with complicated and high-power consumption linearization schemes.

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“…However, the staked FET must be used for implementation because of the CMOS PA's low breakdown voltage. The improvement in power output and D. E of a Class-J PA was presented in 23,24 by realizing a proper half-wave rectified sinusoidal waveform at the gate of the transistor. Apart from the usefulness of this method, it needs additional circuitry because of higher-order filters, which complicates the design and implementation of the PA. A methodology to improve the Class-J PA's performance by injecting the active power at the 2 nd harmonic frequency has been proposed in, 25 which causes an improvement in drain efficiency, but because of doubling and filtering, the design becomes complicated, and an increase in chip area makes it less appealing for integration.…”

Section: Introductionmentioning

confidence: 99%

An enhanced broadband class-J mode power amplifier for 5G smart meter applications

et al. 2021

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Background: With the tremendous increase in the usage of smart meters for industrial/ household purposes, their implementation is considered a crucial challenge in the Internet of Things (IoT) world, leading to a demand for emerging 5G technology. In addition, a large amount of data has to be communicated by smart meters efficiently, which needs a significant enhancement in bandwidth. The power amplifier (PA) plays a major role in deciding the efficiency and bandwidth of the entire communication system. Among the various modes of PAs, a newly developed Class-J mode PA has been proven to achieve high efficiency over a wide bandwidth by maintaining linearity. Methods: This paper proposes a Class-J mode PA design methodology using a CGH40010F-GaN device that operates at a 3.5 GHz frequency to meet the requirements of 5G wireless communication technology for the replacement of existing 4G/LTE technology used for advanced metering infrastructure (AMI) in smart grids. This research's main objective is to design the proper matching networks (M.Ns) to achieve Class-J mode operation that satisfies the bandwidth requirements of 5G smart grid applications. With the target impedances obtained using the load-pull simulation, lumped element matching networks are analyzed and designed in 3 ways using the ADS EDA tool. Results: The simulation results reveal that the proposed Class-J PA provides a maximum drain efficiency (D.E) of 82%, power added efficiency (PAE) of 67% with 13 dB small-signal gain at 3.5 GHz, and output power of 40 dBm (41.4 dBm peak) with a power gain of approximately 7 dB over a bandwidth of approximately 400 MHz with a 28 V power supply into a 50 Ω load. Conclusion: The efficiency and bandwidth of the proposed Class-J PA can be enhanced further by fine-tuning the matching network design to make it more suitable for 5G smart meter/grid applications.

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Investigation of a Class-J Mode Power Amplifier in Presence of a Second-Harmonic Voltage at the Gate Node of the Transistor

Cited by 38 publications

References 19 publications

Highly efficient broadband class‐J power amplifier using modified multisection quarter‐wave lines and short‐circuited stubs

Highly efficient broadband class‐J power amplifier using modified multisection quarter‐wave lines and short‐circuited stubs

A 0.8 mm² Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power

An enhanced broadband class-J mode power amplifier for 5G smart meter applications

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Investigation of a Class-J Mode Power Amplifier in Presence of a Second-Harmonic Voltage at the Gate Node of the Transistor

Cited by 38 publications

References 19 publications

Highly efficient broadband class‐J power amplifier using modified multisection quarter‐wave lines and short‐circuited stubs

Highly efficient broadband class‐J power amplifier using modified multisection quarter‐wave lines and short‐circuited stubs

A 0.8 mm2 Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power

An enhanced broadband class-J mode power amplifier for 5G smart meter applications

Contact Info

Product

Resources

About

A 0.8 mm² Sub-GHz GaAs HBT Power Amplifier for 5G Application Achieving 57.5% PAE and 28.5 dBm Maximum Linear Output Power