2019
DOI: 10.1016/j.diamond.2019.02.016
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Investigation of a distributed antenna array microwave system for the three-dimensional low-temperature growth of nanocrystalline diamond films

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Cited by 8 publications
(6 citation statements)
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“…Among these new technologies, a distributed antenna array (DAA) microwave system composed of a 4 × 4 source planar matrix was designed in order to achieve NCD films at a substrate temperature as low as 100 • C on fourinch wafers. Its efficiency for NCD growth on conventional (silicon) and unconventional substrates such as silicon nitride, AlN/ZnO/IDTs/LiNbO 3 multilayered structures and titanium implants has been demonstrated [4][5][6]. However, such a low temperature process is associated with a very low growth rate of only a few tens of nanometer per hour (nm h −1 ) at the best [7].…”
Section: Introductionmentioning
confidence: 99%
“…Among these new technologies, a distributed antenna array (DAA) microwave system composed of a 4 × 4 source planar matrix was designed in order to achieve NCD films at a substrate temperature as low as 100 • C on fourinch wafers. Its efficiency for NCD growth on conventional (silicon) and unconventional substrates such as silicon nitride, AlN/ZnO/IDTs/LiNbO 3 multilayered structures and titanium implants has been demonstrated [4][5][6]. However, such a low temperature process is associated with a very low growth rate of only a few tens of nanometer per hour (nm h −1 ) at the best [7].…”
Section: Introductionmentioning
confidence: 99%
“…In the same regard, other attempts have been made to enhance the adhesion strength between Ti and NDC films through CVD methods at moderate temperatures to reduce residual stress. Dekkar et al [13] deposited NDC film on a 3D Ti implant using a distributed antenna array (DAA) (MPCVD) reactor at a median temperature (400 °C). Although MPCVD has been observed as a convenient method to deposit NDC films at lower temperatures than HFCVD, it has been reported that the growth rate decreases with decreasing substrate temperature in CVD methods [14].…”
Section: Introductionmentioning
confidence: 99%
“…23 These two techniques operate at low pressures (<2 mbar) and yield larger gas discharge volumes compared to HFCVD and MWPECVD methods, which is beneficial for diamond growth on complex-shaped objects. The latest demonstrations come from Dekkar et al, 24 showing diamond growth on a cylindricalshaped titanium implant of 6.3 mm height with the DAA CVD system, and Varga et al, 25 achieving nonuniform growth on copper rods 2.5 mm in diameter and approximately 30 mm in length using SWP CVD. Therefore, there is a need to investigate diamond synthesis on larger than the above-mentioned objects to facilitate the use of diamond-based materials for orthopedic implants such as a hip replacement.…”
Section: Introductionmentioning
confidence: 99%