Investigation of a graded channel InGaAs/GaAs heterostructure transistor

Li, Yih-Juan; Su, Jan-Shing; Lin, Yu-Hsiang; Hsu, Wei‐Chou

doi:10.1006/spmi.2000.0849

Cited by 2 publications

(1 citation statement)

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“…In order to overcome these drawbacks, several studies have been carried out on the growth of InAlAs/ InGaAs metamorphic HEMTs on GaAs substrates over the past few years. 10 In addition, since the electrons reside near the center of channel, the distance between the ␦-doped layer is farther than nongraded cases, hence Coulomb scattering is reduced. First, it transforms the lattice constant from that of the GaAs substrate to that of the high indium content device active layers.…”

Section: Introductionmentioning

confidence: 99%

Improved characteristics of metamorphic InAlAs∕InGaAs high electron mobility transistor with symmetric graded InxGa1−xAs channel

Hsu

Chen

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Rapid thermal annealing effects on step-graded InAlAs buffer layer and In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor structures on GaAs substrates Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecularbeam epitaxy Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy A metamorphic high electron mobility transistor with symmetric graded In x Ga 1−x As channel has been successfully grown by molecular beam epitaxy system. Due to the lower interface roughness scattering, the improved electron mobility as high as 9500 ͑30 600͒ cm 2 / V s at 300 ͑77͒ K is achieved. By using the self-consistent method, three subbands in the graded channel are found, which is matched to the Shubnikov-de Haas data. By using the graded channel, In 0.425 Al 0.575 As Schottky layer, and undoped InP setback layer, a high gate breakdown voltage of 24 V is obtained. Meanwhile, the measured current gain cutoff frequency f T and maximum oscillation frequency f max for a 1.5 m gate device are 18.9 and 48.4 GHz, respectively.

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Section: Introductionmentioning

confidence: 99%