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Tetrairidium dodecacarbonyl, Ir 4 (CO) 12 , is a massive compound called metal cluster complex, which has a molecular weight of 1104.9. Using an Ir 4 (CO) 7 þ primary ion beam, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples was performed. Depth resolution, defined by 1/e decay length for the trailing edge of the boron delta layer, was investigated in the beam energy ranging from 2.5 to 10 keV at an incident angle of 45 . Experimental results showed that the depth resolution improved with oxygen partial pressure at a beam energy of 5 keV. It was confirmed that the depth resolution without oxygen flooding monotonically improved as beam energy decreased. Furthermore, it was found that the favorable effect of oxygen flooding on depth resolution weakened as beam energy was reduced.

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A coupled δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 µA/mm at V gs=-40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled δ-doped structure, InP channel, In0.34Al0.66As0.85Sb0.15 Schottky layer, and to the large conduction-band discontinuity (ΔE C) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HFET are also studied.

Rapid thermal annealing effects on step-graded InAlAs buffer layer and In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor structures on GaAs substrates Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecularbeam epitaxy Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy A metamorphic high electron mobility transistor with symmetric graded In x Ga 1−x As channel has been successfully grown by molecular beam epitaxy system. Due to the lower interface roughness scattering, the improved electron mobility as high as 9500 ͑30 600͒ cm 2 / V s at 300 ͑77͒ K is achieved. By using the self-consistent method, three subbands in the graded channel are found, which is matched to the Shubnikov-de Haas data. By using the graded channel, In 0.425 Al 0.575 As Schottky layer, and undoped InP setback layer, a high gate breakdown voltage of 24 V is obtained. Meanwhile, the measured current gain cutoff frequency f T and maximum oscillation frequency f max for a 1.5 m gate device are 18.9 and 48.4 GHz, respectively.