Investigation of a Multizone Drift Doping Based Lateral Bipolar Transistor on Buried Oxide Thick Step

Loan, Sajad A.; Qureshi, S.; Iyer, S. Sundar Kumar

doi:10.1007/978-90-481-2311-7_3

Cited by 1 publication

(2 citation statements)

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“…Therefore, an optimum STEP length has to be determined by simulation which gives the maximum breakdown voltage. The increase in the BODS step thickness enhances the breakdown voltage, but at the cost of thermal degradation [19]. Figure 14 shows the impact of changing doping concentration in three zones at the breakdown voltage of the proposed device.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

“…It is quite difficult to obtain perfect uniformity in the electric field distribution. It has been shown theoretically and experimentally that high breakdown voltage can be achieved in thin film SOI devices by using linear doping profiles in the drift region and linearly varying buried oxide [17][18][19][20][21]. These linear profiles will result in a perfectly uniform lateral surface electric field.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A novel high breakdown voltage lateral bipolar transistor on SOI with multizone doping and multistep oxide

Loan¹,

Qureshi²,

Iyer³

2009

Semicond. Sci. Technol.

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A novel high breakdown voltage lateral bipolar junction transistor (LBJT) on silicon-oninsulator (SOI) is proposed. The novelty of the device is the use of the combination of multistep-doped drift region and multistep buried oxide. The steps in doping and in oxide thickness have been used as a replacement for much complex linearly varying drift doping and linearly varying oxide thickness. The LBJT structure incorporating the combination of multistep doping and multistep oxide is analyzed for electrical characteristics using a two-dimensional numerical simulator MEDICI. Numerical simulation has demonstrated that the breakdown voltage of the proposed device with a two-zone step doped (TZSD) drift region is >150% higher than the conventional device. It has been observed that increasing the number of doping zones to 3 from 2 results in a >40% rise in breakdown voltage. The proposed device gives high breakdown voltage even at high doping concentration in the collector drift region. This reduces the on-resistance of the device and thus improves its speed. The dependence of breakdown voltage on various device parameters has been extensively studied to achieve optimum device performance. A process flow for the device fabrication is also being proposed.

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Section: Simulation Results and Discussionmentioning

confidence: 99%