A novel high breakdown voltage lateral bipolar transistor on SOI with multizone doping and multistep oxide

Loan, Sajad A.; Qureshi, S.; Iyer, Srikanth K.

doi:10.1088/0268-1242/24/2/025017

Cited by 13 publications

(3 citation statements)

References 19 publications

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“…However, CMOS fabrication favors lateral bipolar transistor concepts [1][2][3][4][5][6] on SOI since it is easier to tune the SOI layer properties to optimize the CMOS devices without degrading the performance of the bipolar devices [2]. Realization of a true low cost complementary-BiCMOS process is possible only when the lateral bipolar transistors can be fabricated on CMOS using simple fabrication steps with low thermal budgets.…”

Section: Introductionmentioning

confidence: 99%

Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

Kumar

Nadda

2012

IEEE Trans. Electron Devices

207

115

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A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n-and p-type charge plasma layers on undoped SOI to form the emitter, base and collector regions of a lateral NPN transistor. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped lateral bipolar junction transistor with identical dimensions. Our simulation results demonstrate that the BCPT concept will help us realize a superior bipolar transistor in terms of a high current gain compared to a conventional BJT. This BCPT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets which are serious issues in ultra thin SOI structures.

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Section: Introductionmentioning

confidence: 99%

Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

Kumar

Nadda

2012

IEEE Trans. Electron Devices

207

115

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“…The lateral BJT on SOI is advantageous in terms of sharing a fabrication scheme with the CMOS and is hence more compatible with it [10,11]. However, the problems with the lateral BJT on SOI are its inferior cutoff frequency (f T ) and current gain (β) due to large base resistance in comparison to vertical BJT [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

A high performance charge plasma PN-Schottky collector transistor on silicon-on-insulator

Loan

Bashir

Rafat

et al. 2014

Semicond. Sci. Technol.

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In this paper, we propose a new high performance PN-Schottky collector (PN-SC) lateral bipolar junction transistor (BJT) on silicon-on-insulator (SOI). The proposed device addresses the problem of poor speed of conventional lateral PNP-BJT device by using a Schottky collector. Further, it does not use the conventional ways of ion implantation/diffusion to realize n and p type doped region. However, it uses metal electrodes of different work functions to create n and p type charge plasma in an undoped silicon film. The simulation study of the proposed lateral PN-SC bipolar charge plasma transistor on SOI (PN-SC-BCPT) device has shown a significant improvement in current gain (β), cutoff frequency (f T ) and switching performance in comparison to conventional PNP-BJT and PNP-bipolar charge plasma transistor (PNP-BCPT) devices. A significantly high β is obtained in the proposed PN-SC-BCPT (∼2100) in comparison to PNP-BCPT (∼1450) and the conventional BJT (∼9) devices, respectively. It has been observed that there is 89.56% and 153.5% increase in f T for the proposed PN-SC-BCPT device (2.18 GHz) in comparison to conventional PNP-BJT (1.15 GHz) and PNP-BCPT (0.86 GHz) devices, respectively. Further, reductions of 24.6% and 15.4% in switching ON-delay and 66% and 30.76% in switching OFF-delay have been achieved in the proposed device based inverters in comparison to PNP-BCPT and the conventional BJT devices based inverters, respectively. Furthermore, the proposed device does not face doping related issues and the requirement of high temperature processing is absent.

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“…Unfortunately, lateral bipolar transistors suffer from an intrinsic performance limitation related to base width and the base series resistance. This results in severe performance degradation in terms of current gain (β) and cutoff frequency ( f T ) and makes lateral BJT on SOI inferior to a vertical one [12,13]. Further, the compatibility problems in BiCMOS technology may become further deteriorated by high-temperature post ion implantation annealing of emitter and base regions of BJT.…”

Section: Introductionmentioning

confidence: 99%

A high performance charge plasma based lateral bipolar transistor on selective buried oxide

Loan¹,

Bashir²,

Rafat³

et al. 2013

Semicond. Sci. Technol.

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In this paper, we present a new structure of lateral bipolar transistor on selective buried oxide. The device does not use highly doped regions; however, it employs the concept of creating n and p type charge plasma in undoped silicon by using metal electrodes of different work functions. The proposed device is named as the selective buried oxide based bipolar charge plasma transistor (SELBOX-BCPT). An extensive 2D simulation study has revealed that the proposed SELBOX-BCPT device not only possesses all the advantages of the conventional BCPT device, but it also addresses various severe problems of the BCPT device. A significant improvement in major issues of poor cutoff frequency ( f T ), low breakdown voltage and thermal efficiency has been achieved. It has been observed that the f T has increased by ∼94.6%, the breakdown voltage by 23.47% and the device is much cooler than the conventional BCPT device. A large current gain is obtained in the proposed device and is on a par with the conventional BCPT device. Further, by using mixed-mode simulation feature of the Atlas simulator, inverting amplifiers based on SELBOX-BCPT and the conventional BCPT have been realized. A significant improvement of 15% in switching-on transient time and 25.8% in switching-off transient time has been achieved in the proposed device in comparison to the conventional BCPT device.

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A novel high breakdown voltage lateral bipolar transistor on SOI with multizone doping and multistep oxide

Cited by 13 publications

References 19 publications

Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

A high performance charge plasma PN-Schottky collector transistor on silicon-on-insulator

A high performance charge plasma based lateral bipolar transistor on selective buried oxide

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