Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulations

Lei, Jianmei; Hu, Shengdong; Yang, Dong; Huang, Ye; Yuan, Qi; Guo, Jingwei; Zeng, Linghui; Wang, Siqi; Yang, Xuan

doi:10.1007/s10825-018-1168-y

Cited by 2 publications

(2 citation statements)

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“…Three dielectrics are used in this arrangement, a dielectric between the source and gate zones, a dielectric between the drain and drift zones, and another one under the gate and drift zones affecting the breakdown voltage by adding a new peak in the electric field profile 13 . P + buried islands and the p‐top layer in the drift zone significantly improve the breakdown voltage 14 . When the surface electric field can be optimized by the effects of electric field modulation, it leads to an increase in breakdown voltage 15 …”

Section: Introductionmentioning

confidence: 99%

“…13 P + buried islands and the p-top layer in the drift zone significantly improve the breakdown voltage. 14 When the surface electric field can be optimized by the effects of electric field modulation, it leads to an increase in breakdown voltage. 15 In this work, to increase the breakdown voltage of the LDD-SOI transistor relative to the conventional structure, a recession is created at the drain-side under the drift and drain zones and filled with the silicon nitride (SI3N4) layer.…”

Section: Introductionmentioning

confidence: 99%

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Raised breakdown voltage in a high‐voltage recessed LDD‐SOI by submerged SI3N4

Daneshpajooh

Anvarifard

2022

Int J Numerical Modelling

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A new structure of metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) with lateral double‐diffused MOSFET was introduced based on the silicon‐on‐insulator lightly doped‐drain metal‐oxide‐semiconductor field‐effect‐transistor (SOI‐LDD MOSFET) technology, called recessed silicon nitride lateral‐double diffused silicon‐on‐insulator (RS‐LDD SOI). In the proposed structure, a recession was created on the buried oxide layer and filled with a silicon nitride (SI3N4) layer. Silicon nitride makes the electric field distribution more uniform by modulating the electric field in the drift zone, thereby increasing the breakdown voltage of the proposed structure. The simulation results performed with ATLAS software demonstrated the performance improvement of the proposed structure. Increasing the breakdown voltage by 31% compared to the conventional structure was one of the most important achievements of this work. Also, design considerations were made on the submerged part in the buried oxide, which can be an excellent guide to achieving the optimal performance of the proposed structure.

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Section: Introductionmentioning

confidence: 99%