Investigation of an Integrated Sensor to Determine Junction Temperature of SiC MOSFETs During Power Cycling Tests

Kempiak, Carsten; Lindemann, Andreas; Idaka, Shiori; Thal, Eckhard

doi:10.23919/icpe2019-ecceasia42246.2019.8797181

Cited by 9 publications

(4 citation statements)

References 10 publications

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“…Alternatively, on-chip temperature sensors [13] or the internal gate resistance as another TSEP [14] can be used.…”

Section: Figure 1: Temperature Calibration Curve Of a Git Igo60r070d1...mentioning

confidence: 99%

Adapted temperature calibration for Schottky p-GaN power HEMTs

Goller,

Franke,

Fischer

et al. 2023

ISPS'23 Proceedings

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The determination of the junction temperature in power semiconductor devices is an important but challenging task. For GaN HEMTs, no universal temperature sensitive electrical parameter (TSEP) is available. In this study, different GaN HEMTs with Schottky p-GaN gate were subjected to stress by positive gate bias and temperature. The gate leakage current is one parameter to determine the junction temperature of Schottky p-GaN gate devices. An adapted calibration routine is applied to stabilize the desired TSEP of different GaN HEMTs. The gate current method can be applied to GaN Systems devices. Furthermore, the investigations indicate stability of the on-state resistance of Innoscience devices and threshold voltage of EPC devices, respectively.

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“…Alternatively, on-chip temperature sensors [13] or the internal gate resistance as another TSEP [14] can be used.…”

Section: Figure 1: Temperature Calibration Curve Of a Git Igo60r070d1...mentioning

confidence: 99%

Adapted temperature calibration for Schottky p-GaN power HEMTs

Goller,

Franke,

Fischer

et al. 2023

ISPS'23 Proceedings

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“…Electrical methods use some proprieties of the semiconductors that depend on the temperature [26]. Thermal test chips, e.g., resistance temperature detector or diode, are fabricated on the device surface.…”

Section: Estimation Of the Junction Temperature And Thermal Resistanc...mentioning

confidence: 99%

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters

et al. 2023

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The thermal management of power converters is not only crucial for their own optimal operation and reliability, but also for the overall system in which they are operating. Reliability is a very serious aspect because power electronics systems are being increasingly widely adopted in mission-critical applications in the e-mobility sector, in smart grids, and other applications where safety and operational continuity are essential. The current trend towards miniaturization of power conversion systems and, consequently, towards high power density solutions is speeding up the diffusion of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT). GaN HEMT-based high power density converters must be properly managed, making the estimation of the thermal characteristics of these devices essential. This paper proposes the use of some Thermo-Sensitive Electrical Parameters (TSEP) for a simple and effective thermal resistance evaluation. The primary advantages and limitations of these TSEPs have been critically analyzed. The analysis highlighted that the use of the gate-source voltage is the best approach. However, it requires direct access to the gate pin, which may not be available externally in some system-in-package solutions.

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“…Additionally, the gate voltage can be varied to determine the temperature from the forward voltage at an equivalent current level [29]. The forward voltage can also be measured with additional diodes on the chip area, connected to a small current source [32], [33]. The problem of the current dependency does not arise with the internal gate resistor as TSEP.…”

Section: Introductionmentioning

confidence: 99%

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

Gleissner

Nehmer

Bakran

2023

IEEE Open J. Power Electron.

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This paper presents research results on the junction temperature measurement via the internal gate resistance in converter operation for IGBTs and its applicability to other types of active power semiconductors. A junction temperature monitor has been developed to determine the value of the temperature-dependent internal gate resistance by using a sinusoidal voltage superimposed on the gate voltage at the resonance frequency. The device enables a simple and robust junction temperature measurement in inverter operation, which is in excellent agreement with an infrared reference measurement. The method's applicability to semiconductors other than Si-IGBTs, such as SiC-MOSFETs, JFETs, and GaN devices, is verified by gate impedance measurements using a network analyzer. The gate impedance's quality factor is decisive. Other temperature-sensitive electrical parameters (TSEPs) related to the switching behavior depend on the internal gate resistance. Therefore, the findings presented are relevant for many junction temperature measurement methods.INDEX TERMS Junction temperature, semiconductor device measurements, silicon carbide devices, temperature measurement, temperature-sensitive electrical parameters, wide-band-gap devices.

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Investigation of an Integrated Sensor to Determine Junction Temperature of SiC MOSFETs During Power Cycling Tests

Cited by 9 publications

References 10 publications

Adapted temperature calibration for Schottky p-GaN power HEMTs

Adapted temperature calibration for Schottky p-GaN power HEMTs

Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

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