Investigation of analogue performance for process-induced-strained PMOSFETs

Kuo, Jack J.-Y.; Chen, William P.N.; Su, Pin

doi:10.1088/0268-1242/22/4/019

Cited by 7 publications

(2 citation statements)

References 16 publications

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“…Co-processed strained and unstrained p-MOSFETs are investigated in this study. The strained devices were fabricated by state-of-the-art process-induced uniaxial strained-silicon technology featuring SiGe source/drain and compressive contact etch stop layer (CESL) [10]. For the transistors with gate length L gate = 65 nm, the saturation drain current (I d ) of the strained device is improved more than 85% as compared with its control counterpart.…”

Section: Resultsmentioning

confidence: 99%

On the Enhanced Impact Ionization in Uniaxial Strained p-MOSFETs

Kuo

2007

IEEE Electron Device Lett.

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This letter reports a new mechanism for the enhanced impact-ionization rate (I sub /I d ) present in shortchannel uniaxial strained p-MOSFETs. Through the pinch-off voltage (V dsat ), we have assessed the impact of strain on the maximum channel electric field. Due to the strain-enhanced mobility, V dsat becomes lower, resulting in the observed V g -dependent enhancement in I sub /I d . This mechanism needs to be considered when one-to-one comparisons of the hot-carrier effect between strained and unstrained devices are made.Index Terms-Hot-carrier effect, impact ionization, strainedsilicon, substrate current.

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Section: Resultsmentioning

confidence: 99%

On the Enhanced Impact Ionization in Uniaxial Strained p-MOSFETs

Kuo

2007

IEEE Electron Device Lett.

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“…However, MOCVD growth of AlInGaN alloys with high Al content is difficult because of the indium loss at high growth temperatures (typically 700-800 °C), and consequently, the MOCVD-grown quaternary alloys are limited by low In and high Al contents. AlInGaN films of various compositions were deposited on Si(001) substrates by rf reactive sputtering at 200 °C from Cermet targets with different In [106] or Al [83] contents. The obtained polycrystalline layers had wurtzite structure with a A variant of sputtering dubbed pulsed sputtering deposition (PSD) has been successfully applied to grow device-quality III-nitride materials at temperatures, again much lower than those used in conventional MOCVD and MBE [74,75].…”

Section: Iii-nitrides Grown By Sputteringmentioning

confidence: 99%

Emergence of high quality sputtered III-nitride semiconductors and devices

Izyumskaya¹,

Avrutin²,

Ding³

et al. 2019

Semicond. Sci. Technol.

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This article provides an overview of recent development of sputtering method for high-quality III-nitride semiconductor materials and devices. Being a mature deposition technique widely employed in semiconductor industry, sputtering offers many advantages such as low cost, relatively simple equipment, non-toxic raw materials, low process temperatures, high deposition rates, sharp interfaces, and possibility of deposition on large-size substrates, including amorphous and flexible varieties. This review covers two major research directions: (1) ex situ sputtered AlN buffers to be used for subsequent growth of GaN-based structures by conventional techniques, such as metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), or molecular beam epitaxy (MBE), and (2) deposition of the entire III-nitride layered stacks and device structures by sputtering. Replacing conventional in situ GaN or AlN buffer layers with ex situ sputtered AlN buffers for MOCVD, HVPE, or MBE growth of IIInitride films on sapphire and silicon substrates results in the improved crystal quality through reduction in dislocation density and residual strain. Extensive efforts in the field of sputter deposition of III-nitrides resulted in crystalline quality of sputtered III-nitride films compatible with that of MOCVD and MBE grown layers despite the lower temperatures used in sputtering. For example, sputtering techniques made it possible to achieve GaN layers heavily doped with Si and Ge to electron concentrations in mid-10 20 cm −3 range with mobilities exceeding 100 cm 2 V −1 s −1 , resulting in conductivities as high as those of benchmark transparent conducting oxides such as indium tin oxide (ITO). For moderate levels of doping with Si, mobilities comparable to state-of-the-art MOCVD-grown material have been demonstrated (up to ∼1000 cm 2 V −1 s −1 ). The first promising results have been reported for devices (light emitters and field effect transistors) entirely produced by sputtering.

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