This paper investigates the analogue performance of process-inducedstrained PMOSFETs for system-on-a chip applications. Through a comparison between co-processed strained and unstrained PMOSFETs regarding important analogue metrics such as transconductance to drain current ratio (g m /I d ), output resistance, dc gain and the gain-bandwidth product, the impact of process-induced uniaxial strain on the analogue performance of MOS devices has been assessed and analysed. Our study may provide insights for analogue design using advanced strained devices.
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