Investigation of atmospheric-pressure plasma deposited SiOx films on polymeric substrates

Enhanced surface hardness of flexible polycarbonate substrates using plasma-polymerized organosilicon oxynitride films by air plasma jet under atmospheric pressure

“…2 shows that the longer the substrate distance, the higher the transmittance of PC/SiO x C y N z at a lower wavelength. Huang et al [23] deposited TEOS plasma-polymerized SiO x onto PC substrate by APPJ with a transmittance of~80% in a visible region. Hence, this study is an improvement, resulting in the synthesis of highly transparent TMDSO plasma-polymerized SiO x C y N z films onto PC substrates with transmittances of 90.4-96.2% at a wavelength of 550 nm.…”

“…At the shorter substrate distance of 2 cm and the longer substrate distance of 5 cm, the surface hardness of PC/SiO x C y N z slightly decreased to 6H. Huang et al [23] reported that the TEOS plasma-polymerized SiO x on PC substrate by APPJ has a surface hardness of HB. Therefore, this study produces harder TMDSO plasmapolymerized SiO x C y N z films on PC substrates with a surface hardness of up to 7H.…”

“…Plasma polymerization, a special PECVD process with precursors such as tetraethoxysilane (TEOS) [8][9][10][11][12][13][14], hexamethyldisilazane (HMDSO) [15][16][17][18][19][20] and hexamethyldisilazane (HMDSN) [21,22], has been proven to synthesize organosilicon thin films onto hard silicon or glass substrates at atmospheric pressure. However, only a few studies have reported the deposition of organosilicon thin films onto soft polymer substrates, such as PC [7,23,24], polyethylene terephthalate (PET) [25][26][27] and polyethylene-2,6 naphlate (PEN) [27]. Plasma polymerization at atmospheric pressure using precursors such as TEOS [23] or HMDSO [7,[24][25][26][27] for the restricted low process temperature (b70°C) avoids substrate dimension changes during the film formation.…”

“…However, only a few studies have reported the deposition of organosilicon thin films onto soft polymer substrates, such as PC [7,23,24], polyethylene terephthalate (PET) [25][26][27] and polyethylene-2,6 naphlate (PEN) [27]. Plasma polymerization at atmospheric pressure using precursors such as TEOS [23] or HMDSO [7,[24][25][26][27] for the restricted low process temperature (b70°C) avoids substrate dimension changes during the film formation. Hence, the high deposition rate for deposition of organosilicon thin films onto polymeric substrates without substrate dimensional changes, which occur during film formation, plays a key role in the plasma polymerization of thin films onto polymeric substrates at atmospheric pressure.…”

Synthesis of SiOC(–H) Films by the Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition Method

“…Synthesis of SiOC(-H) films by remote system to large area under atmospheric pressure could make it protect materials. Deposition outside discharge area was employed an atmospheric pressure plasma jet [16,17]. Silicon dioxide has been deposited by mixing TEOS or HMDSO with atmospheric pressure plasma jet at high temperature [18,19].…”