Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding

The integration of III–V active devices on a Si platform utilizing direct bonding is an attractive way to realize large-scale photonic integrated circuits. Because plasma activated bonding (PAB) is expected to have a higher bonding strength at a lower heating temperature as compared to conventional bonding methods, PAB is attractive for the reduction of non-radiative recombination centers in the III–V active region caused by thermal expansion during the bonding process. A GaInAsP/Si hybrid laser was fabricated with low-temperature (150 °C) N2 PAB, and a low threshold current density of 850 A/cm2 (170 A/cm2 per quantum well) was obtained.

mentioning

confidence: 99%

Low Threshold Current Density Operation of a GaInAsP/Si Hybrid Laser Prepared by Low-Temperature N₂ Plasma Activated Bonding

Hayashi

Osabe

Fukuda

et al. 2013

“…This is almost the same bonding strength as that reported for the surface activated bonding 300 µ µm process. 20,21) Thus, we conclude that a pre-cure time of over 20 min at 200 C is sufficient for void-free bonding.…”

Section: Experimental Methodsmentioning

confidence: 78%

Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits

Lee

Maeda

Atsumi

et al. 2012

Low-power and compact optical interconnects can be realized using III–V membrane photonic integrated circuits fabricated from thin InP-based films bonded to a Si wafer using benzocyclobutene (BCB) adhesive wafer bonding method. However, the conditions of the bonding and fabrication process strongly affect the propagation loss of waveguides. This study investigated the process conditions during bonding and waveguide fabrication with a view to reducing the propagation loss. It was found that clean, large GaInAsP thin films without air voids or fractures could be obtained by using an appropriate solvent volatilization time of 20–30 min at 200 °C for BCB. Furthermore, by using a resist with high dry etching resistance and an SiO2 mask for the etching process, the sidewall roughness of the waveguide was significantly reduced, which finally afforded a waveguide propagation loss as low as 4 dB/cm.

“…We introduced a lowtemperature bonding method with N 2 plasma activation. 14,15) Owing to this low-temperature bonding at 150 °C, we achieved a relatively low threshold current density J th of 850 A=cm 2 (170 A=cm 2 =well) on a bare SOI substrate. 16) Referring to previous results obtained by N 2 plasmaactivated bonding (PAB), in this paper, we report on the investigation of a hybrid laser using Si ring resonators, aiming at the implementation of a photonics-electronics convergence router.…”

Section: Introductionmentioning

confidence: 99%

“…III-V=Si hybrid integration using direct bonding technologies [14][15][16][17] is emerging as a platform for large-scale PICs, wherein conventional III-V-based PIC technology is combined with Si photonics technology. Furthermore, wafer-towafer bonding is particularly superior for mass productivity compared with flip-chip assembly, because a large number of gain sections can be formed simultaneously during a single bonding process.…”

Section: Introductionmentioning

confidence: 99%

GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N₂ plasma-activated bonding

Hayashi

Suzuki

Inoue

et al. 2016

Self Cite

III–V/Si hybrid integration with direct bonding is an attractive method of realizing an electrophotonic convergence router with a small size and a low power consumption. Plasma-activated bonding (PAB) is an effective approach for reducing thermal stress during the bonding process because PAB achieves a high bonding strength with low-temperature annealing. This time, the fabrication of a GaInAsP/silicon-on-insulator (SOI) hybrid laser with Si ring-resonator-type reflectors was demonstrated by N2 PAB. By measuring the lasing spectra, we confirmed the reflective characteristics resulting from the cascaded Si ring resonators. We also investigated kink characteristics, which occur around the threshold current, of the current–light output (I–L) characteristics, and successfully approximated the kink characteristics by considering saturable absorption occurring at the III–V/Si taper tip. The taper structure was investigated in terms of a passive device as well as an active device, and a structure for eliminating saturable absorption was proposed.