Abstract:We demonstrate an electrically-pumped hybrid silicon microring laser fabricated by a self-aligned process. The compact structure (D = 50 µm) and small electrical and optical losses result in lasing threshold as low as 5.4 mA and up to 65 °C operation temperature in continuous-wave (cw) mode. The spectrum is single mode with large extinction ratio and small linewidth observed. Application as on-chip optical interconnects is discussed from a system perspective. ©2009 Optical Society of America

A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buriedheterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 microm and a stripe width of 2 microm.

Abstract-In this paper, the state-of-the art of long-wavelength GaInAsP/InP membrane semiconductor lasers, one of the most promising candidate light sources for optical interconnects and on-chip optical wiring between large-scale integrated circuits, is described. After an extensive review of research activities focused on laser preparation on either Si or Si-on-insulator substrate, the findings of our recent research activities on low power consumption lasers are presented. Specifically, our interest was set on the low-damage fabrication of strongly index-coupled grating, which is generally opted forDFB and distributed reflector (DR) lasers consisting of wire-like active regions, as well as of high index-contrast membrane waveguides. A submilliampere threshold current and a differential quantum efficiency close to 50% from the front facet were achieved in the case of the DR laser. On the other hand, a lateral current injection (LCI) structure, which can be combined with the membrane laser, was adopted for the realization of an injection-type membrane laser. The successful continuous wave operation of LCI lasers, prepared on a semiinsulating InP substrate, was achieved with moderately low threshold current at room temperature.Index Terms-DFB laser, distributed reflector (DR) laser, GaInAsP/InP, optical interconnect, optical wiring, semiconductor laser, single-mode laser, Si-on-insulator (SOI) circuits, III-V materials.

A room-temperature pulsed operation was demonstrated using lateral current injection-type lasers composed of a 400-nm-thick GaInAsP core layer with compressively strained 5 quantum wells. A threshold current of 105 mA and corresponding density of 1.3 kA/cm 2 (260 A/cm 2 per well) were obtained with the stripe width of 5.4 µm and the cavity length of 1.47 mm. A fundamental transverse mode operation was obtained with the narrower stripe device of 2.0 µm and the cavity length of 805 µm, while the threshold current and corresponding density were 49 mA and 3.0 kA/cm 2 , respectively.

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