GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate

Minamikawa, Takeo; Okumura, Tadashi; Sakamoto, Shinichi; Miura, K.; Nishimoto, Yoshio; Arai, Shigehisa

doi:10.1364/oe.14.008184

Cited by 52 publications

(32 citation statements)

References 7 publications

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“…Several single wavelength lasers on a III-V/silicon photonics platform have been demonstrated, both based on distributed feedback (DFB) and distributed Bragg reflector (DBR) geometries [11][12][13][14]. The demonstrated heterogeneous III-V/SOI DBR lasers consist of two passive Bragg reflector mirrors etched on silicon waveguides.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Keyvaninia¹,

Roelkens²,

Thourhout³

et al. 2013

Opt. Express

180

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Abstract:A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 ⁰C and a thermooptic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

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Section: Introductionmentioning

confidence: 99%

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Keyvaninia¹,

Roelkens²,

Thourhout³

et al. 2013

Opt. Express

180

View full text Add to dashboard Cite

show abstract

“…The final theme for assimilation of photonic and micro-electronics assembly requires hybridization of typical integration methods used [2,[12][13][14][15]. One example of hybrid assembly is the hybrid silicon platform developed by the University of California at Santa Barbara and Intel Corporation.…”

Section: Integration Of Photonic Components Into Microelectronicsmentioning

confidence: 99%

Electrospinning for nano- to mesoscale photonic structures

et al. 2016

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Abstract:The fabrication of photonic and electronic structures and devices has directed the manufacturing industry for the last 50 years. Currently, the majority of small-scale photonic devices are created by traditional microfabrication techniques that create features by processes such as lithography and electron or ion beam direct writing. Microfabrication techniques are often expensive and slow. In contrast, the use of electrospinning (ES) in the fabrication of microand nano-scale devices for the manipulation of photons and electrons provides a relatively simple and economic viable alternative. ES involves the delivery of a polymer solution to a capillary held at a high voltage relative to the fiber deposition surface. Electrostatic force developed between the collection plate and the polymer promotes fiber deposition onto the collection plate. Issues with ES fabrication exist primarily due to an instability region that exists between the capillary and collection plate and is characterized by chaotic motion of the depositing polymer fiber. Material limitations to ES also exist; not all polymers of interest are amenable to the ES process due to process dependencies on molecular weight and chain entanglement or incompatibility with other polymers and overall process compatibility. Passive and active electronic and photonic fibers fabricated through the ES have great potential for use in light generation and collection in optical and electronic structures/ devices. ES produces fiber devices that can be combined with inorganic, metallic, biological, or organic materials for novel device design. Synergistic material selection and postprocessing techniques are also utilized for broad-ranging applications of organic nanofibers that span from biological to electronic, photovoltaic, or photonic. As the ability to electrospin optically and/or electronically active materials in a controlled manner continues to improve, the complexity and diversity of devices fabricated from this process can be expected to grow rapidly and provide an alternative to traditional resource-intensive fabrication techniques.

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“…Specifically, a P th of 2.8 mW was obtained for a device of 2 μm width and 120 μm length under RT-CW conditions [63]. Subsequently, a rib waveguide membrane DFB laser was integrated with a passive waveguide fabricated on an SOI substrate, as shown in Fig.…”

Section: A Membrane Dfb Lasers With Wire-like Active Regionsmentioning

confidence: 99%

GaInAsP/InP Membrane Lasers for Optical Interconnects

Arai

Nishiyama

Minamikawa

et al. 2011

IEEE J. Select. Topics Quantum Electron.

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Abstract-In this paper, the state-of-the art of long-wavelength GaInAsP/InP membrane semiconductor lasers, one of the most promising candidate light sources for optical interconnects and on-chip optical wiring between large-scale integrated circuits, is described. After an extensive review of research activities focused on laser preparation on either Si or Si-on-insulator substrate, the findings of our recent research activities on low power consumption lasers are presented. Specifically, our interest was set on the low-damage fabrication of strongly index-coupled grating, which is generally opted forDFB and distributed reflector (DR) lasers consisting of wire-like active regions, as well as of high index-contrast membrane waveguides. A submilliampere threshold current and a differential quantum efficiency close to 50% from the front facet were achieved in the case of the DR laser. On the other hand, a lateral current injection (LCI) structure, which can be combined with the membrane laser, was adopted for the realization of an injection-type membrane laser. The successful continuous wave operation of LCI lasers, prepared on a semiinsulating InP substrate, was achieved with moderately low threshold current at room temperature.Index Terms-DFB laser, distributed reflector (DR) laser, GaInAsP/InP, optical interconnect, optical wiring, semiconductor laser, single-mode laser, Si-on-insulator (SOI) circuits, III-V materials.

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GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate

Cited by 52 publications

References 7 publications

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Electrospinning for nano- to mesoscale photonic structures

GaInAsP/InP Membrane Lasers for Optical Interconnects

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