Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Abstract

Abstract:A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and front mirrors. Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 ⁰C and a thermooptic wavelength tuning range of 8 nm are achieved. The laser linewidth is found to be 1.7 MHz.

III-V-on-Silicon Photonic Devices for Optical Communication and Sensing

“…Using a single ring resonator, tuning of around 10 nm typically can be reached. E.g., in [8] we demonstrated up to 8 nm tuning by applying 25 mW of electrical power to the ring resonator (Figure 9a). This device had a threshold current of 45 mA and output power of up to 10 mW at room temperature.…”

“…This means that no power exchange occurs between the fundamental waveguide mode and the higher order waveguide modes. In many of our recently developed laser devices, a double adiabatic tapered coupler has been successfully implemented [7][8][9]. For use in electro-absorption modulator (EAM) devices, a very compact tri-sectional tapered coupler has recently been proposed [10].…”

Demonstration of a discretely tunable III-V/SOI sampled grating distributed feedback laser

“…These laser structures typically make use of one or more ring resonator filters with heaters that allow to thermally tune the lasing wavelength [4], [5]. An alternative laser structure that consists of 2 sampled grating DBR mirrors, a gain and a phase section, has been used to demonstrate over 13 nm wavelength tuning [6].…”

Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

“…Electrically-pumped laser source on silicon has been successfully demonstrated, either by using strained and doped germanium (Ge) [7], or by integrating III-V on silicon (Si) [8,9].…”