Investigation of c-axis-aligned crystalline gadolinium doped aluminum-zinc-oxide films sputtered at room-temperature

Dong, Junchen; Li, Huijin; Han, Dedong; Wen, Yintang; Luo, Zhen; Liang, Yi; Zhang, Shengdong; Zhang, Xing; Wang, Yi

doi:10.1063/1.5011226

Cited by 6 publications

(3 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7c has one prominent peak at 34.3°, indicating Sn atoms can successfully replace Zn sites in the lattice and form C-axis-aligned crystalline (CAAC). [39][40][41] The average grain size of the TZO film is estimated to be 17.1 nm using the Scherer formula, this can also be confirmed by the SEM image shown in Fig. 7d.…”

Section: Resultssupporting

confidence: 66%

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

Chen

Han

Zhang

et al. 2019

Sci Rep

Self Cite

View full text Add to dashboard Cite

In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. The TAL TFTs were found to combine the advantages of SAL TFTs (a low off-state current) and DAL TFTs (a high mobility and a low threshold voltage). The proposed TAL TFTs exhibit superior electrical performance, e.g. a high on-off state current ratio of 2 × 108, a low threshold voltage of 0.63 V, a high field effect mobility of 128.6 cm2/Vs, and a low off-state current of 3.3 pA. The surface morphology and characteristics of the ITO and TZO films were investigated and the TZO film was found to be C-axis-aligned crystalline (CAAC). A simplified resistance model was deduced to explain the channel resistance of the proposed TFTs. At last, TAL TFTs with different channel lengths were also discussed to show the stability and the uniformity of our fabrication process. Owing to its low-processing temperature, superior electrical performance, and low cost, TFTs with the proposed TAL channel configuration are highly promising for flexible displays where the polymeric substrates are heat-sensitive and a low processing temperature is desirable.

show abstract

Section: Resultssupporting

confidence: 66%

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

Chen

Han

Zhang

et al. 2019

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…Aside from the influence of dopant, deposition technique and deposition parameters play an important role in producing good quality of films with enhanced properties. Most of the previous research works have implemented many deposition techniques to fabricate Gd-doped ZnO thin films such as using sol-gel process [12][13], spray pyrolysis [14], sputtering [15], pulse laser deposition [16] and chemical vapor deposition [17]. Among the various deposition techniques, the sputtering method was considered as one of the best techniques to improve the properties and quality of films because it is easy to control the deposition parameters and produce a homogeneous film [18].…”

Section: Introductionmentioning

confidence: 99%

Influence of Various Target to Substrate Distances on the Structural and Optical Properties of Sputtered Gd-Doped ZnO Thin Films

Raship

Tawil

Nayan

et al. 2021

SSP

View full text Add to dashboard Cite

The effect of various target to substrate distance on the physical properties of sputtered Gd-doped ZnO thin films were investigated. The thin films with three distances between a target to substrate ranged from 12.0, 13.5 and 15.0 cm were deposited by a dual-target sputtering method. All the thin film properties were characterized using x-ray diffraction, atomic force microscope, energy dispersive x-ray analysis and ultra-violet visible spectrophotometer. The sharp and intense peak of (002) was observed for a sample with the target to substrate distance of 13.5 cm which indicated good crystallinity as compared to other samples. Gd incorporations of 3 at% in ZnO films were further confirmed via the energy dispersive x-ray analysis. AFM images revealed that the surface topology Gd-doped ZnO thin film have a smooth and uniform surface. The transmittance was above 90 % and slightly decrease with the increase of target to substrate distance. The bandgap value was static at 3.14 eV for all the 12.0, 13.5 and 15.0 cm of various target to substrate distances.

show abstract

“…Instead of the type of dopant, the enhancement of the ZnO properties are also depending on the deposition method as well as their parameters. ZnO thin films with various dopants and morphology have been reported synthesized using the solution and vacuum-based method such as spin coating [7][9], RF and DC sputtering [10], chemical vapor deposition (CVD) [11], and spray pyrolysis [12]. Among the reported method, sputtering provides low deposition temperature, a large area of coating with good structure uniformity and easiness in controlling the deposition parameters.…”

Section: Introductionmentioning

confidence: 99%

Influence of Substrate Rotational Speed on the Structural and Optical Properties of Sputtered Gd-Doped ZnO Thin Films

Raship

Tawil

Nayan

et al. 2021

MSF

View full text Add to dashboard Cite

Rare-earth element of gadolinium (Gd) were successfully doped into zinc oxide (ZnO) using dual sputter source of DC and RF sputtering. The substrate rotation speed was controlled from 1 rpm to 9 rpm to investigate their effects on the properties of the films in order to achieve a great feature of thin film. XRD profiles confirmed the c-axis orientation with structure of ZnO hexagonal wurtzite. No peaks related to secondary phases were observed. The intensity of dominant peak showed increment upon improvement of substrate rotation speed. The incorporation of Gd into ZnO structure was further confirmed by composition element form EDX with average atomic percentage of 3 at. % for all the films. Surface topology from AFM images showed the grain size has increased with the higher speed of substrate rotation. Gd-doped ZnO thin films indicated good transparency with an average transmittance above 90 % regardless of substrate rotation speed. The bandgap has a slight decrease from 3.06 eV to 3.03 eV with an increment speed of rotational substrate. These findings further imply that the substrate rotation speed has a significant influence on the structural and optical properties of the sputtered thin films.

show abstract

Investigation of c-axis-aligned crystalline gadolinium doped aluminum-zinc-oxide films sputtered at room-temperature

Cited by 6 publications

References 28 publications

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

Influence of Various Target to Substrate Distances on the Structural and Optical Properties of Sputtered Gd-Doped ZnO Thin Films

Influence of Substrate Rotational Speed on the Structural and Optical Properties of Sputtered Gd-Doped ZnO Thin Films

Contact Info

Product

Resources

About