Investigation of carrier scattering mechanisms in TlInS₂ single crystals by Hall effect measurements

Abstract

TlInS 2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole-and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 meV and a set of donor energy levels located at 360, 280, 220 and 170/152 meV are determined from the temperature dependencies of the carrier concentration and conductivity. A hole, electron, hole-electron pair effective masses of 0.24 m o , 0.14 m o and 0.09 m o and hole-and electron-phonon coupling constants of 0.50 and 0.64, respectively, are obtained from the Hall effect measurements. The theoretical fit of the Hall coefficient reveals a hole to electron mobility ratio of 0.8.

First-Principles Calculation of Electronic Structure and Effective Mass of a TlInS$_{2}$ Crystal

“…Calculated value for electron (hole) effective mass, 0.14m e (0.24m e ), in the 3 g direction is in a good agreement with experimental effective mass for electron (hole) 0.14m e (0.19m e ) in this direction [5]. …”

“…The direct band gap was determined to be 2.34 eV [4]. Hole, electron, hole-electron pair effective masses of 0.24m 0 , 0.14m 0 and 0.09m 0 are obtained from the Hall effect measurements [5]. Obtained from the excitonic and interband transitions' studies of the TlInS 2 crystals, reduced masses are 0.15m 0 [6], 0.17m 0 [7].…”

Параметрический резонанс и фотогальванические токи в слоистом кристалле TlGaSe-=SUB=-2-=/SUB=-

“…Именно фо-тогальванический ток на интервалах времени резкого изменения светового потока может вести к эффекту занижения величины регистрируемого фотоотклика, по-скольку соответствующий ему ток экранирования течет внутри кристалла и не вносит вклада в сумму токов, регистрируемых во внешней измерительной цепи. При относительно небольшой подвижности носителей заря-да [20] пространственная неоднородность распределения свободных носителей в объеме кристалла, формируемая под действием фотогальванической эдс, вполне может вести к возникновению параметрического резонанса то-ков проводимости и экранирования.…”

Behavior of the Switching Effect in P-Type TlInS2 Ternary Chalcogenide Semiconductor

“…For the last few years there have been considerable interest in the investigation of physical properties of layered ternary crystal with chemical formula TlBX 2 , where B = Ga or In and X = S or Se [1] . The lattice of TlBX 2 type crystals consist of alternating two dimensional layers arranged parallel to the (001) plane [2] .…”