2011
DOI: 10.1016/j.apsusc.2011.01.116
|View full text |Cite
|
Sign up to set email alerts
|

Investigation of chemical mechanical polishing of zinc oxide thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

1
8
0

Year Published

2011
2011
2021
2021

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 20 publications
(9 citation statements)
references
References 36 publications
1
8
0
Order By: Relevance
“…At a Ga concentration of around x = 0.4, the shape of the valence band spectrum switched from that for the cubic In 2 O 3 structure to that for the β-Ga 2 O 3 structure. Also, for the cubic In 2 O 3 valence band structure, we confirmed clear conduction band features around the Fermi level ( E f , binding energy = 0 eV), which is consistent with our previous work and can be attributed to the SEAL formation . With increasing Ga concentration, the area intensity of the electronic states of the SEAL decreased.…”
Section: Resultssupporting
confidence: 91%
See 1 more Smart Citation
“…At a Ga concentration of around x = 0.4, the shape of the valence band spectrum switched from that for the cubic In 2 O 3 structure to that for the β-Ga 2 O 3 structure. Also, for the cubic In 2 O 3 valence band structure, we confirmed clear conduction band features around the Fermi level ( E f , binding energy = 0 eV), which is consistent with our previous work and can be attributed to the SEAL formation . With increasing Ga concentration, the area intensity of the electronic states of the SEAL decreased.…”
Section: Resultssupporting
confidence: 91%
“…To generate a SEAL, metal adatoms, surface oxygen vacancies, and adsorbates have been proposed. , For In 2 O 3 , H 2 O adsorption does not form a SEAL . However, we have observed a SEAL at the surface of an In 2 O 3 (100) single crystal polished by chemical mechanical polishing (CMP) using hard and conventional X-ray photoelectron spectroscopy with energies of 5.95 and 1.49 keV, respectively (hereafter, HAXPES and XPS, respectively) . The thickness of the SEAL with the highest carrier concentration of 1.2 × 10 20 cm –3 was around 1 nm from the surface.…”
Section: Introductionmentioning
confidence: 99%
“…Sushant Gupta et al [14] provided a comprehensive study on the process parameters of CMP to ZnO thin films; they investigated the influence of parameters such as slurry pH, down pressure, platen speed, abrasive size and concentration to polishing effect of films. The removal rate and the surface root mean square roughness could reach 67 nm/min and 6 Å respectively, though the removal rate was low.…”
Section: Introductionmentioning
confidence: 99%
“…TCOs, including indium tin oxide (ITO), zinc oxide, aluminate zinc oxide, and F-doped tin oxide are generally formed on substrates by DC magnetron sputtering, vacuum deposition using resonance heating, or spray pyrolysis [1][2][3][4][5][6]. Crystalline conductive oxides grow vertically on substrate surfaces, and tall projections and spiked structures several tens of nanometers high can form on targets sputtered with TCOs [7].…”
Section: Introductionmentioning
confidence: 99%