Investigation of Chemical Vapor Deposition (CVD)-Derived Cobalt Silicidation for the Improvement of Contact Resistance

Kim, Hyun-Su; Yun, Ji-Hoon; Moon, Kyong Whan; Sohn, Woong-Hee; Jung, Sung Yoon; Jung, Eun Ji; Kim, Se Hoon; Bae, Nam-Jin; Choi, Gil Heyun; Kim, Sung-Tae; Chung, U‐In; Moon, Joo-Tae; Ryu, Byung-Il

doi:10.1143/jjap.44.3828

Cited by 5 publications

(2 citation statements)

References 3 publications

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“…Cobalt metalorganic precursors have been used in the generation of thin films of cobalt metal, cobalt silicide, cobalt oxide, and cobalt nitride, 54–57 materials having applications in areas including microelectronics, heterogeneous catalysis, lithium ion batteries, giant magneto-resistance devices, and spintronics. Atomic layer deposition and CVD processes utilizing CCTBA have been reported for depositing cobalt metal (as a copper diffusion barrier, a seed layer, and for subsequent silicidation) 58–64 and cobalt oxide films. 65 Although CCTBA is a liquid, it exhibits a relatively low vapor pressure at room temperature and the tendency is to deliver CCTBA at elevated temperatures to increase partial pressure.…”

Section: Introductionmentioning

confidence: 99%

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor

et al. 2017

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A nondispersive infrared (NDIR) gas analyzer was demonstrated for measuring the vapor-phase density of the carbonyl-containing organometallic cobalt precurso μ-η-(Bu-acetylene) dicobalthexacarbonyl (CCTBA). This sensor was based on direct absorption by CCTBA vapor in the C≡O stretching spectral region and utilized a stable, broadband IR filament source, an optical chopper to modulate the source, a bandpass filter for wavelength isolation, and an InSb detector. The optical system was calibrated by selecting a calibration factor to convert CCTBA absorbance to a partial pressure that, when used to calculate CCTBA flow rate and CCTBA mass removed from the ampoule, resulted in an optically determined mass that was nominally equal to a gravimetrically-determined mass. In situ Fourier transform infrared (FT-IR) spectroscopy was performed simultaneously with the NDIR gas analyzer measurements under selected conditions in order to characterize potential spectroscopic interferences. Interference due to CO evolution from CCTBA was found to be small under the flow conditions employed here. A CCTBA minimum detectable molecular density as low as ≈3 × 10cm was calculated (with no signal averaging and for a sampling rate of 200 Hz). While this NDIR gas analyzer was specifically tested for CCTBA, it is suitable for characterizing the vapor delivery of a range of carbonyl-containing precursors.

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Section: Introductionmentioning

confidence: 99%

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor

et al. 2017

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“…[3][4][5] CoSi 2 has also been used for various Si-based applications such as buried CoSi 2 conducting patterns and a diffusion barrier and as a thermally stable metallization material for nanoparticles and nano-wires as well as compound semiconductors. [6][7][8] Most importantly, CoSi 2 is a promising candidate for addressing this R ext scaling issue because it is insensitive to the line width effect.…”

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confidence: 99%

Effect of CoSi₂Formation Process on CMOS Transistor Electrical Properties for Sub-100-nm Memory Applications

Park

Kim

Lee

et al. 2016

ECS J. Solid State Sci. Technol.

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We investigated the effect of various processing conditions on abnormal CoSi 2 formation, such as the well-known Co spike and crystal agglomeration. We used Co metal sputtering and subsequent thermal treatment such as rapid thermal processing. The effect of the ion implantation conditions and Co deposition method were studied. To evaluate the electrical failure of transistors, we checked the chip level leakage current (I pp ), and the unit level leakage current (JLC) in the test pattern, simultaneously. As the dopant species and concentration were believed to affect the electrical properties of every single transistor, chip level leakage current and unit level leakage current deteriorate or improve simultaneously. When we used a Ti/TiN capping layer and high-temperature physical vapor deposition, abnormal growth was suppressed and the interface became smooth. The chip level leakage current in both cases showed significant improvement; however, the unit level leakage current showed a negligible change in contrast to the chip level one. We concluded that, despite no change in unit level leakage current, the overall level of chip level leakage current improved because of the significantly decreased number of defective sites such as Co spike. As complementary metal-oxide-semiconductor (CMOS) scaling occurs, the parasitic component of transistors, such as the external resistance (R ext ), plays an increasingly critical role in the overall electrical performance of transistors.1 Various components, which might be junctions, contacts, or metal interconnects, contribute to R ext . Most importantly, the contribution of R ext to degradation of metal contacts (the contact resistance) is the most serious problem, because the contact area decreases monotonously with feature size scaling of integrated circuits. Considering that the contact resistance is proportional to the resistivity ρ times the contact area A, we should reduce the resistivity significantly to meet the R ext requirement. However, the resistivity is also degraded with decreasing contact area owing to the well-known line width effect. 2The structural properties and formation behavior of cobalt silicide (CoSi 2 ) are of considerable practical interest for nano-electronic applications. Its high chemical inertness and thermal stability, together with its low resistivity, have promoted its use for metallization in integrated circuit fabrication.3-5 CoSi 2 has also been used for various Si-based applications such as buried CoSi 2 conducting patterns and a diffusion barrier and as a thermally stable metallization material for nanoparticles and nano-wires as well as compound semiconductors. [6][7][8] Most importantly, CoSi 2 is a promising candidate for addressing this R ext scaling issue because it is insensitive to the line width effect.It has been widely reported that the formation of cobalt silicide is directly affected by various surface states, such as the existence of silicon oxide and surface passivation.9-11 For this reason, extensive studies have been done ...

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Formation of cobalt silicide from filter metal vacuum arc deposited films

Whitlow

Zhang

Wang

et al. 2006

Nuclear Instruments and Methods in Physics Research Section B:

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Investigation of Chemical Vapor Deposition (CVD)-Derived Cobalt Silicidation for the Improvement of Contact Resistance

Cited by 5 publications

References 3 publications

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor

Effect of CoSi₂Formation Process on CMOS Transistor Electrical Properties for Sub-100-nm Memory Applications

Formation of cobalt silicide from filter metal vacuum arc deposited films

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Investigation of Chemical Vapor Deposition (CVD)-Derived Cobalt Silicidation for the Improvement of Contact Resistance

Cited by 5 publications

References 3 publications

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor

Nondispersive Infrared Gas Analyzer for Vapor Density Measurements of a Carbonyl-Containing Organometallic Cobalt Precursor

Effect of CoSi2Formation Process on CMOS Transistor Electrical Properties for Sub-100-nm Memory Applications

Formation of cobalt silicide from filter metal vacuum arc deposited films

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Effect of CoSi₂Formation Process on CMOS Transistor Electrical Properties for Sub-100-nm Memory Applications