2012
DOI: 10.7567/jjap.51.015802
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Investigation of Cu-Deficient Copper Gallium Selenide Thin Film as a Photocathode for Photoelectrochemical Water Splitting

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Cited by 23 publications
(37 citation statements)
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“…To the best of our knowledge, the HC-STH value for the modified CuInS 2 electrode is the highest among I-III-VI 2 chalcopyrite photocathodes. [15,19,20,[22][23][24][25] The results indicated that surface modification of p-type photocathodes with n-type layers was an effective approach to enhancing the photocurrent and onset potential of the photocathodes. Furthermore, the hydrogen production was confirmed to be highly efficient and stable under the present reaction conditions.…”
mentioning
confidence: 96%
“…To the best of our knowledge, the HC-STH value for the modified CuInS 2 electrode is the highest among I-III-VI 2 chalcopyrite photocathodes. [15,19,20,[22][23][24][25] The results indicated that surface modification of p-type photocathodes with n-type layers was an effective approach to enhancing the photocurrent and onset potential of the photocathodes. Furthermore, the hydrogen production was confirmed to be highly efficient and stable under the present reaction conditions.…”
mentioning
confidence: 96%
“…[21][22][23] As shown in Scheme 1, for a solid solution of ZnSe and CIGS, the VBM is expected to be deeper than that for CIGS, and the absorption edge longer than that for ZnSe. In this work, we investigated the PEC properties of (ZnSe) x (CIGS) 1-x thin-film photocathodes.…”
mentioning
confidence: 98%
“…[16][17][18] For efficient PEC H 2 evolution, efficient separation of the photogenerated electrons and holes is extremely important. [15,19,20,[22][23][24][25] The results indicated that surface modification of p-type photocathodes with n-type layers was an effective approach to enhancing the photocurrent and onset potential of the photocathodes. [19][20][21] In the present work, p-type CuInS 2 photoelectrodes were prepared by a combination of electrodeposition of Cu-In metal layers and sulfurization of deposited metal precursors.…”
mentioning
confidence: 98%