2013
DOI: 10.1002/pen.23726
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Investigation of current‐voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide

Abstract: Temperature dependent current-voltage (I-V) measurements of Au/Polyvinyl Alcohol 1 Bi 2 O 3 /n-Si structure were conducted between 100 and 350 K for investigating the temperature dependence of I-V characteristics and current conduction mechanisms in the structure. Series resistance of the structure is calculated using Ohm's law and Cheungs' method. Ideality factor (n) and zero-bias barrier height (U Bo ) were obtained considering thermionic emission theory. From 100 to 350 K, n changed from 32.1 to 3.54, and U… Show more

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Cited by 10 publications
(2 citation statements)
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“…This temperature dependence of the barrier heights indicates presence of inhomogeneous barrier height at ZnO/P3HT:PCBM interface and deviation from thermionic emission theory. Similar results were also reported in other metal‐semiconductor systems like Al/p‐Si, In/p‐Si, Ni/n‐GaAs/In, Au/n‐Si, Al/PANI/Nd 2 O 3 :Al 2 O 3, and Au/PVA + Bi 2 O 3 /n‐Si . Durmus et al in their work on Au/n‐Si Schottky barrier also investigated the effect of distribution of interface traps and their restructuring and reordering under the effect of temperature for larger values on ideality factor.…”
Section: Resultssupporting
confidence: 76%
“…This temperature dependence of the barrier heights indicates presence of inhomogeneous barrier height at ZnO/P3HT:PCBM interface and deviation from thermionic emission theory. Similar results were also reported in other metal‐semiconductor systems like Al/p‐Si, In/p‐Si, Ni/n‐GaAs/In, Au/n‐Si, Al/PANI/Nd 2 O 3 :Al 2 O 3, and Au/PVA + Bi 2 O 3 /n‐Si . Durmus et al in their work on Au/n‐Si Schottky barrier also investigated the effect of distribution of interface traps and their restructuring and reordering under the effect of temperature for larger values on ideality factor.…”
Section: Resultssupporting
confidence: 76%
“…The I s , n and Φ Bo values determined from the forward bias ln I-V plots are 3.11 Â 10 À 9 A, 2.93, and 0.78 eV for Au/PVCþTCNQ/p-Si and 6.66 Â 10 À 6 A, 5.76, and 0.57 eV for Au/Mo-doped (PVCþ TCNQ)/p-Si structures, respectively, at room temperature and they are also shown in Table 1. These high values of n for both diodes can be attributed to the particular density distribution of surface states (N ss ) localized at M/S interface, the thickness of interfacial layer and its inhomogeneity, and the nature of barrier height at M/S interface [23][24][25][26][27][28][29][30]. Also, the image-force effect, recombination-generation, and tunneling via interface states may be possible mechanisms that lead to decrease in n value [24,31].…”
Section: Forward Bias Current-voltage (I-v) Characteristicsmentioning
confidence: 98%