Investigation of Defect Inp(001) Surface by the Method of Low Energy Ion Scattering

Abstract

Investigation of grazing scattering of 3 keV Ar+ and Xe+ ions from the defect surface InP(001) are reported. Computer simulations based on the binary collision approximation permit one to carry out a quantitative analysis of data. It is determined that energy distributions of reflected ions directly depend on the defect structure of the topmost surface layer, and these defects form some peaks in low energy part of energy distribution.