Investigation of DX centers in modulation-doped field-effect transistor-type Al0.3Ga0.7As/GaAs heterostructures using a fourier-transform deep level transient spectroscopy system

Haddab, Y.; Py, M.A.; Bühlmann, H.‐J.; Ilegems, M.

doi:10.1007/bf02649900

Cited by 2 publications

References 14 publications

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Low-frequency noise measurements of AlxGa1−xAs/InyGa1−y As/GaAs high electron mobility transistors

Haddab

Deveaud

Bühlmann

et al. 1995

Journal of Applied Physics

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Low-frequency noise measurements have been performed in the linear range of the I-V characteristics of pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As/GaAs high electron mobility transistors (HEMTs) grown by molecular beam epitaxy with different channel thicknesses. The results obtained show that the 1/f noise in such devices depends greatly on channel thickness. It is controlled by the penetration of the electron wavefunction into the barrier as well as by Coulombic effects for thin channels and by the increase in dislocation concentration for thick ones. Generation-recombination (G-R) noise is also present. It is mainly due to real-space transfer of electrons between the two-dimensional electron gas in the channel and the conduction band minimum in the AlxGa1−xAs barrier. Similar results were obtained for the G-R noise of Al0.22Ga0.78As/In0.20Ga0.8As/GaAs, Al0.3Ga0.7As/GaAs, and Al0.48In0.52As/In0.47Ga0.53As/InP HEMTs.

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Low-frequency noise measurements of AlxGa1−xAs/InyGa1−y As/GaAs high electron mobility transistors

Haddab

Deveaud

Bühlmann

et al. 1995

Journal of Applied Physics

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A new method to analyze closely spaced deep defect levels caused by multiexponential transients

Bakry

2013

2013 Saudi International Electronics, Communications and Photonics Conference

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A new method is presented to analyze nonexponential capacitance transients, caused by closely-spaced deep defect levels active at the same temperature range, into the appropriate components. It is capable to resolve deep-level transient spectroscopy (DLTS) signals having one or more shoulders, generated by two or more trap levels. Closely-spaced traps are accompanied by the observation of multiple emission rates making the differentiation between them almost impossible using conventional analysis techniques. The proposed method utilizes a hybrid between the conventional DLTS technique, based on Lang's method [1], and the non-linear double exponential fitting routine previously published by the author. This technique was successfully tested on Se-doped n-type Al x Ga 1-x As sample, having what is known as DX centers, and was capable of resolving up to seven deep levels with activation energies ranging from 270 -486 meV.

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Investigation of DX centers in modulation-doped field-effect transistor-type Al0.3Ga0.7As/GaAs heterostructures using a fourier-transform deep level transient spectroscopy system

Cited by 2 publications

References 14 publications

Low-frequency noise measurements of AlxGa1−xAs/InyGa1−y As/GaAs high electron mobility transistors

Low-frequency noise measurements of AlxGa1−xAs/InyGa1−y As/GaAs high electron mobility transistors

A new method to analyze closely spaced deep defect levels caused by multiexponential transients

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