Investigation of electrical and optoelectronic properties of zinc oxide nanowires

Zhang, D.; Lee, S.K.; Chava, Sirisha; Berven, Christine; Katkanant, V.

doi:10.1016/j.physb.2011.06.001

Cited by 8 publications

(3 citation statements)

References 29 publications

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“…15,16 On the other hand, the field-effect measurement has been performed on ZnO NWs to probe the electrical transport properties using various construction procedures. 17,18 In most cases, the NW is prepared in isopropanol alcohol or ethanol and then dispersed onto a SiO 2 /Si substrate. Subsequently, the NW is located and contacted by micro-electrodes which were patterned by photolithography, electron-beam lithography, or focused ion beam techniques.…”

Section: Introductionmentioning

confidence: 99%

“…Various techniques have been employed for characterizing semiconductor NWs; the most commonly used techniques being the Hall-effect and field-effect measurements. Many efforts have been made using the Hall effect measurement technique, which is geometrically difficult to perform on NWs, and only few literature studies report Hall effect measurements on ZnO NWs. , On the other hand, the field-effect measurement has been performed on ZnO NWs to probe the electrical transport properties using various construction procedures. , In most cases, the NW is prepared in isopropanol alcohol or ethanol and then dispersed onto a SiO 2 /Si substrate. Subsequently, the NW is located and contacted by micro-electrodes which were patterned by photolithography, electron-beam lithography, or focused ion beam techniques. − Therefore, the contact resistance and Schottky barrier at NW–electrode junctions that comprise the ZnO NW FET limit the device performance considerably due to different work functions, resulting in an overestimation of the field-effect mobility because the calculation does not take the contact resistance into account. , However, these techniques have several points in common which can be highlighted: (a) the devices are constructed on two, three, or four electrodes processed via a series of nanofabrication procedures for current transport studies.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Djoulde

Mamela

et al. 2022

ACS Appl. Nano Mater.

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Electrical characterization of semiconducting oxide nanowires (NWs) is mostly performed using complex techniques, which necessitates a series of costly nanofabrication procedures. In this work, with the aim to provide a low-cost, feasible, facile, and reproducible approach for enabling the study of NW electrical properties, we report direct electrical measurements on individual and overlapped suspended zinc oxide NWs (ZnO NWs). We have succeeded in constructing both two-and three-terminal devices simply by employing tungsten (W) nanoprobes with the aid of a nanomanipulation system embedded inside a scanning electron microscope's vacuum chamber. Stable contacts were established using the Joule heating effect and e-beam exposure at the junctions between the NW and the pre-cleaned W tips. P-channel field-effect transistor devices were achieved with an on−off current ratio of ∼10 1 , a threshold voltage (>1.5 V), a transconductance of ∼16 μS, a sub-threshold swing of ∼220 mV/decade, and field-effect carrier mobility roughly estimated to be around 926.4 cm 2 /(V•s) after correction for contact resistances/optimization. The average resistivity of ZnO NWs was calculated to be ∼2.23 × 10 −2 Ω•cm for NWs with diameters between 70 and 500 nm. Besides, we have demonstrated a contact resistance of ∼19.60 kΩ and a Schottky barrier height of ∼0.37 eV present at W/ZnO NW interfaces. The contact resistance between two overlapped ZnO NWs was estimated to be ∼283 kΩ, which is relatively higher than that offered between W/ZnO NWs. This work provides a solid experimental procedure to address true intrinsic electrical properties at metal/semiconductor interfaces, and our findings have potential applications in next-generation 3D suspended ZnO NW-based nanoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Djoulde

Mamela

et al. 2022

ACS Appl. Nano Mater.

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“…The nanoscale proximity of ZnO and CNTs enable sub-second photoresponse upon pulsed illumination as compared to ZnO thin-film photodetectors whose response time can be as long as minutes or more . Moreover, the ZnO–CNT hybrid exhibits a large photocurrent of μA-mA, compared to ∼nA levels measured for devices based on a single ZNW , or ZNW arrays, − at comparable UV illumination intensity. Last, we study how the amplitude and direction of the photocurrent are controlled by competition between the built-in potential formed in ZnO−CNT interface and the externally applied bias.…”

Section: Introductionmentioning

confidence: 99%

Rapid Anisotropic Photoconductive Response of ZnO-Coated Aligned Carbon Nanotube Sheets

Ok¹,

Lee²,

Baac³

et al. 2013

ACS Appl. Mater. Interfaces

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We investigate the rapid and anisotropic UV-induced photoconductive response of hybrid thin films comprising zinc oxide (ZnO) nanowires (NWs) directly grown on horizontally aligned (HA-) carbon nanotube (CNT) sheets. The films exhibit anisotropic photoconductivity; along the CNTs, conductivity is dominated by the CNTs and the photoconductive gain is lower, whereas perpendicular to the CNTs the photoconductive gain is higher because transport is influenced by ZnO nanoclusters bridging CNT-CNT contacts. Because of the distributed electrical contact provided by the large number of ZnO NWs on top of the HACNT film, this hybrid nanoarchitecture has a significantly greater photocurrent than reported for single ZnO NW-based devices at comparable UV illumination intensity. Moreover, the hybrid architecture where a thin basal film of ZnO ohmically contacts metallic CNTs enables rapid transport of photogenerated electrons from ZnO to CNTs, resulting in sub-second photoresponse upon pulsed illumination. The built-in potential generated across ZnO-CNT heterojunctions competes with the externally applied bias to control the photocurrent amplitude and direction. By tuning the anisotropic conductivity of the CNT network and the morphology of the ZnO or potentially other nanostructured coatings, this material architecture may be engineered in the future to realize high-performance optical and chemical sensors.

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Density functional study on electrochemical reduction of carbon dioxide to C1 products using zinc oxide catalyst

2023

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Investigation of electrical and optoelectronic properties of zinc oxide nanowires

Cited by 8 publications

References 29 publications

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Rapid Anisotropic Photoconductive Response of ZnO-Coated Aligned Carbon Nanotube Sheets

Density functional study on electrochemical reduction of carbon dioxide to C1 products using zinc oxide catalyst

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