Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer

Tezcan, Ali Osman; Eymür, Serkan; Taşcı, Enis; Emrullahoğlu, Mustafa; Tuğluoğlu, Nihat

doi:10.1007/s10854-021-05886-7

Cited by 10 publications

(3 citation statements)

References 28 publications

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“…30 The ideality factor and barrier height values of Schottky diodes with organic interfacial layer prepared by means of n-Si semiconductor in literature were introduced in Table II. 7,[30][31][32][33] The barrier inhomogeneity in a diode form from dispersion of high and low barrier height local patches. 26 These patches have a nanoscale dimension.…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3] In recent studies, MIS or MOS type structures have been created by growing organic materials between metal and semiconductor with different techniques. [4][5][6][7] In all these structures, the most basic electrical parameters of the structure are the ideality factor and the Schottky barrier height. As known, for the improvement of reliability and performance of the structures is highly important to produce high quality Schottky barrier diodes.…”

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confidence: 99%

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The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

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We report the results of temperature-dependent barrier properties of Au/NAMA/n-Si Schottky diode in the low temperature range of 80-330 K. The analysis results of thermionic emission theory showed that the barrier height decreases, and the ideality factor increases towards low temperatures, depend on the barrier height inhomogeneities. The obtained results show the presence of a double Gaussian distributions with standard deviations (σ_0) of 0.073 and 0.18 V and mean barrier height (Φ ̅_b0) values of 0.595 and 1.427 eV in the change of 80-140 and 160-330 K, respectively. Moreover, evaluation of the modified Richardson curve, the values of Richardson constant (A^*) of 321.805 and 110.935 A K-2 cm-2, and mean barrier height of 0.606 and 1.422 eV were found for the low- and high-temperature regions, respectively. The A^* value of 110.935 A K-2 cm-2 is close to the theoretical value of 112 A K-2 cm-2 for n-Si. These results proved that there is barrier inhomogeneity.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Tuğluoğlu

Pakma²,

Akın³

et al. 2023

ECS J. Solid State Sci. Technol.

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“…Recently, Metal/organic material/semiconductor (MOmS) structures such as metal/semiconductor (MS) contacts have received considerable attention as they have low forward voltage drop and fast switching. [1][2][3][4][5][6][7][8][9][10] As the literature suggests, it is viable to improve the performance and reliability of Schottky diodes depending on the organic materials utilized as the interfacial layer 4 Organic materials are inexpensive and easily fabricated, possess easily miniaturized dimensions, high a flexibility, and properties that can be conveniently planned through chemical synthesis. These materials are suitable to be used as Schottky diodes due to their aforementioned advantages, thereby making diodes with organic interface more implementable and alleviating the restrictions of traditional devices with silicon.…”

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Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

Çavdar

Demirölmez

Turan

et al. 2022

ECS J. Solid State Sci. Technol.

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Inorganic-organic Schottky contacts based on Gelatin on n-Si wafer have been prepared by a spin coating technique. The reverse and forward bias capacitance-voltage and conductance-voltage properties of the Al/Gelatin/n-Si Schottky diode at room temperature in the frequency range from 30 kHz to 1 MHz have been explored by the series resistance and interface states effects into account. The conductance and Hill-Coleman method were used to determine interfacial layer capacitance, the "R" _"s" and D_it. Result of experiments approved that the "R" _"s" and "D" _"it" are considerable parameters which severely impact the basic electrical parameters of Al/Gelatin/n-Si Schottky diode. Both the measured capacitance and conductance were corrected to obtain the real diode capacitance ("C" _"c" ) and conductance ("G" _"c" ). Schottky diode parameters such as barrier height ("Φ" _"B" ), ionized donor density ("N" _"D" ), Fermi level ("E" _"F" ), built-in voltage were extracted from frequency-dependent "C" _"c" "-V" and "1" ⁄("C" _"c" ^"2" ) "-V" relations.The "R" _"s" and "D" _"it" values decrease, while the "Φ" _"B" values increase as the frequency increases. Results reveal that the fabricated diode can be used as an powerful material for electronic applications

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Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure

Çavdar,

Oruç,

Eymur

et al. 2024

J Mater Sci: Mater Electron

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Abstractn-TPA-IFA organic material was synthesized and deposited on p-Si by spin coating method to produce n-TPA-IFA/p-Si heterojunction diode. We determined that the dielectric constant and energy band gap of TPA-IFA organic material were 3.91 and 3.37 eV by DFT/B3LYP/6-311G(d,p) method using on Gaussian 09 W, respectively, and the carrier type of TPA-IFA organic semiconductor material was also n-type at room temperature from temperature-dependent hall effect measurements. Using forward and reverse bias I–V measurements in the dark and under various light intensities, we examined the key electrical characteristics of the n-TPA-IFA/p-Si heterojunction diode, including $${\Phi }_{b}$$ Φ b and $$n$$ n . It was determined that the rectification ratio (RR) was approximately 104. The reverse current's observed increasing behavior with increasing light indicates that the produced heterojunction diode can be utilized as a photodiode, detector, or sensor. The values of n, $${\Phi }_{b}$$ Φ b , and Io were determined using I–V data in dark as 1.34, 0.91 eV, and 7.25 9 10–12 A, respectively. On the other hand, when the n-TPA-IFA/p-Si heterojunction diode is exposed to 100 mW/cm2 illumination, these parameters were obtained as 1.85, 0.80 eV, and 5.11 9 10–10 A, respectively. Photovoltaic parameters such as short circuit current (Isc) and open circuit voltage (Voc) were determined as 0.018 mV, 0.08 A and 0.050 mV, 0.29 A under 20 mW/cm2 light and 100 mW/cm2 light intensity, respectively. The photodetector properties of n-TPA-IFA/p-Si heterostructure were explored at different light intensities, and the photoresponsivity (R), photosensitivity (PS), specific detectivity ($${D}^{*}$$ D ∗ ), and linear dynamic range (LDR) of the heterojunction changed with reverse voltage and light intensity. It was found that as light intensity increased, the linear dynamic range (LDR), a crucial characteristic for image sensors, increased as well (10.15 dB and 18.84 dB for 20 and 100 mW/cm2).

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Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer

Cited by 10 publications

References 28 publications

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Au/NAMA/n-Si Schottky Diodes

Investigation of Trap States, Series Resistance and Diode Parameters in Al/Gelatin/n-Si Schottky Diode by Voltage and Frequency Dependent Capacitance and Conductance Analysis

Investigation of photosensitive and photodetector characteristics of n-TPA-IFA/p-Si heterojunction structure

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