Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range

Bengi, S.; Yükseltürk, Esra; Bülbül, Metín

doi:10.1007/s10854-022-09613-8

Cited by 6 publications

(3 citation statements)

References 55 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, when the series resistance effect is taken into account, the N SS interface state density corresponds to a value of 1.15 × 10 13 (eV −1 cm −2 ) at the same location. Similar N SS values to the calculated ones have been reported by Bengi et al [23] in their recent study on Al/HfO 2 /p-Si.…”

Section: Resultssupporting

confidence: 91%

“…Kahraman et al [22] investigated the effects of frequency and gamma irradiation on MOS devices with HfO 2 interface layers fabricated using RF magnetron sputtering method. Bengi et al [23] examined the electrical characteristics of the Al/HfO 2 /p-Si structure over a wide temperature range. Botzakaki et al [24] investigated the interface properties and transport mechanism of the Al/HfO 2 /p-Ge structure.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effect of silver doping on electrical characteristics of aluminum/HfO₂/p-silicon metal-oxide-semiconductor devices

Demir,

Pakma,

Kariper

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this study, undoped and silver (Ag) doped hafnium oxide (HfO2) thin films were prepared by sol-gel dipping method and their effect as an interface material in a p-Si-based metal-oxide-semiconductor device was investigated for the first time. The structural effects of Ag doping were investigated using x-ray diffraction patterns. Al/HfO2:Ag/p-Si devices were fabricated using these films, and their electrical properties were characterized by measuring current-voltage (I–V) curves at room temperature. The ideality factor values of the devices decreased from 4.09 to 2.20 as the Ag doping ratio increased. Simultaneously, the barrier height values increased from 0.60 eV to 0.81 eV. The calculated series resistance values, determined by two different methods, demonstrated that the lowest resistance values were obtained at a 1% Ag doping ratio. Furthermore, the interface state densities were found to vary with the doping ratio. The improvement in electrical parameters resulting from Ag doping can be attributed to the reduction in molar volume due to structural phase transformation. The decrease in the ideality factor suggests enhanced carrier transport efficiency, while the increase in barrier height indicates improved energy band alignment at the metal/semiconductor interface.

show abstract

Section: Resultssupporting

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Effect of silver doping on electrical characteristics of aluminum/HfO₂/p-silicon metal-oxide-semiconductor devices

Demir,

Pakma,

Kariper

et al. 2023

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The voltage-dependent ideality factor n (V), effective barrier height (Φ e ), and Rs values are used for determining the energy density distribution profile of N ss . For calculating n(V) and (Φ e ), respectively, the following equations have been given [44][45][46][47][48][49].…”

Section: = -F *mentioning

confidence: 99%

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Bengi

2023

Phys. Scr.

Self Cite

View full text Add to dashboard Cite

Using the I-V characteristics both in the dark and under varied illumination-intensities (50–250 mW.cm−2) by 50 mW.cm−2 steps in the wide range bias-voltage (±5 V), specific fundamental electrical and photo effects parameters of the Au/C20H12/n-Si SBD were examined. Due to the creation of electron–hole pairs and their drift in opposite directions under the influence of an electric field, the value of photocurrent in the reverse bias (Iph) increases when illumination density is increased. The barrier height (ΦB0) tended to decrease due to the increase in photocurrent, while the diode’s ideality factor (n) increased with increasing illumination intensity. Also, the Schottky structure’s open-circuit voltage (Voc), short circuit current (Isc), filling factor (FF), and efficiency (η) were determined to be 0.358 V, 95.5 μA, 33%, and 0.028% under 50 mW.cm−2, respectively. The Rs and Rsh values found using Ohm’s law are a vital function of illumination and voltage which decrease with increasing illumination intensity. Additionally, using the forward bias I-V data and accounting for the bias dependent of the effective barrier height (Φe) and ideality factor n(V) for different illumination intensities, the energy density distribution profile of surface states (Nss) was obtained. According to these results, the organic interlayer consisting of C20H12 is light-sensitive and suitable for optoelectronic devices such as photodetectors and photodiodes.

show abstract

Investigation of incorporating CeO2 seed layer for overgrowth of Green synthesized CeO2 nanostructures deposited on Si (111) substrate

Milad

Nsar

Hassan

et al. 2023

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range

Cited by 6 publications

References 55 publications

Effect of silver doping on electrical characteristics of aluminum/HfO₂/p-silicon metal-oxide-semiconductor devices

Effect of silver doping on electrical characteristics of aluminum/HfO₂/p-silicon metal-oxide-semiconductor devices

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Investigation of incorporating CeO2 seed layer for overgrowth of Green synthesized CeO2 nanostructures deposited on Si (111) substrate

Contact Info

Product

Resources

About

Investigation of electrical characterization of Al/HfO2/p-Si structures in wide temperature range

Cited by 6 publications

References 55 publications

Effect of silver doping on electrical characteristics of aluminum/HfO2/p-silicon metal-oxide-semiconductor devices

Effect of silver doping on electrical characteristics of aluminum/HfO2/p-silicon metal-oxide-semiconductor devices

The effects of illumination on the current conduction mechanisms of the Au/C20H12/n-Si Schottky barrier diode (SBD)

Investigation of incorporating CeO2 seed layer for overgrowth of Green synthesized CeO2 nanostructures deposited on Si (111) substrate

Contact Info

Product

Resources

About

Effect of silver doping on electrical characteristics of aluminum/HfO₂/p-silicon metal-oxide-semiconductor devices

Effect of silver doping on electrical characteristics of aluminum/HfO₂/p-silicon metal-oxide-semiconductor devices

The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)