Investigation of electrical conductivity in Schottky-barrier devices based on nickel phthalocyanine thin films

Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films

“…If applied bias is higher than barrier height (high forward biases), the nature of the bulk conduction reveals. When the number of injected carriers exceeds the number of thermal carriers (available in the diamond bulk), the charge transport switches from an ohmic character (I*V), to a space-charge-limited current (SCLC) (I*V 2 ), described by the Mott-Gurney law [24,25]. Figure 4a shows a I-V-(T) graph for Dpk18, i.e., undoped diamond sample measured in temperatures between ca.…”

The distribution of barrier heights in MIS type Schottky diodes from current–voltage–temperature (I–V–T) measurements

“…The mechanisms responsible for producing an inhomogeneity are not yet fully understood. The BH is likely to be a function of the interface atomic structure, and the inhomogeneity at a MS interface may be caused by grain boundaries, multiple phases, facets, defects, and a mixture of different phases [15][16][17][18][19][20][21][22][23][24][25][26]. The deviation in TE model observed in I-V characteristics could be quantitatively explained by assuming specific distribution of nanometer scale patches of small regions with low BH.…”

Study of Barrier Structures on the Base of Nickel Phthalocyanine Thin Films During the Interaction with the Ammonia Medium

“…Deposition conditions of NiPC thin films define their molecular orientation which then affects optical and electrical properties of a film [9,[16][17][18][19]. It was shown that the a-modification of nickel phthalocyanine (a-NiPc) has higher sensitivity to gaseous media as compared with other polymorphs [9].…”