Investigation of electrical properties of photosensitive structures of reduced dimension based on silicon

Abstract

In this paper, we propose a method for reducing the energy loss of photosensitive structures based on nanocrystalline silicon using passivating coatings of dysprosium fluoride. Since this material has good optical and photoelectric properties, when preparing Si/DyF3 structures, the dielectric film makes it possible to reduce the number of recombination centers and increase light absorption. Methods for creating and studying photosensitive structures with coatings are shown. A technique for determining the thickness of a dysprosium fluoride coating due to light interference is described. The results of studying the photosensitivity spectra and the reflectance of the obtained photosensitive structures are presented. The positive effect of silicon nanostructures, as well as dysprosium fluoride films on the photosensitivity spectra of the structures, is shown. With the help of the data obtained, it is planned to improve the existing technology for creating photosensitive structures based on porous silicon in order to increase their output characteristics.