In this paper, we consider the effect of porous silicon and dysprosium fluoride films on the current-voltage characteristics of low-dimensional photosensitive structures based on silicon. The processes of creating and studying the resulting photosensitive structures are described. The current-voltage characteristics of the structures before and after coating are given. The study found a positive effect of porous silicon and dysprosium fluoride coating on the current-voltage characteristics of structures both with and without porous silicon. Values of the optimal thickness of the dysprosium fluoride coating for porous photosensitive structures are obtained. It is shown that dysprosium fluoride coatings do not always have a positive effect on such parameters of photosensitive structures as short-circuit current and open-circuit voltage, since this is due to the non-uniformity of film deposition on the surface of the structure.

In this paper, we propose a method for reducing the energy loss of photosensitive structures based on nanocrystalline silicon using passivating coatings of dysprosium fluoride. Since this material has good optical and photoelectric properties, when preparing Si/DyF3 structures, the dielectric film makes it possible to reduce the number of recombination centers and increase light absorption. Methods for creating and studying photosensitive structures with coatings are shown. A technique for determining the thickness of a dysprosium fluoride coating due to light interference is described. The results of studying the photosensitivity spectra and the reflectance of the obtained photosensitive structures are presented. The positive effect of silicon nanostructures, as well as dysprosium fluoride films on the photosensitivity spectra of the structures, is shown. With the help of the data obtained, it is planned to improve the existing technology for creating photosensitive structures based on porous silicon in order to increase their output characteristics.