Investigation of electrodeposition kinetics of In, Sb, and Zn for advanced designing of InSb and ZnSb thin films

Rajska, Dominika; Brzózka, Agnieszka; Hnida-Gut, Katarzyna E.; Sulka, Grzegorz D.

doi:10.1016/j.jelechem.2020.114967

Cited by 5 publications

(3 citation statements)

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“…The duration of pulse “on” and “off” were 1 and 5 ms, respectively, based on previous research ( Hnida et al, 2015 ). During pulse “on” the reduction of In and Sb citric complexes occur, while during pulse “off” replenishment of electrolyte near the working electrode surface and dissolution of the top surface of deposit happen ( Rajska et al, 2021 ). Section of the typical electrodeposition pulse sequence is presented in Figure 2A .…”

Section: Methodsmentioning

confidence: 99%

Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

et al. 2022

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High-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternative concept of III-V integration combining advantages of pulse electrodeposition, template-assisted selective epitaxy, and recrystallization from a melt. Efficient electrodeposition of nano-crystalline and stochiometric InSb in planar templates on Si (001) is achieved. The InSb deposits are analysed by high resolution scanning transmission electron microscopy (HR-STEM) and energy-dispersive X-ray spectroscopy (EDX) before and after melting and recrystallization. The results show that InSb can crystallise epitaxially on Si with the formation of stacking faults. Furthermore, X-ray photoelectron (XPS) and Auger electron (AE) spectroscopy analysis indicate that the InSb crystal size is limited by the impurity concentration resulting from the electrodeposition process.

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Section: Methodsmentioning

confidence: 99%

Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

et al. 2022

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“…Figure 4 shows that I pc and v 1/2 have an excellent linear relationship, indicating that the electrochemical reduction process of In 3+ is controlled by the diffusion control step, and the diffusion coefficient of In 3+ can be found from the Berzins–Delahay equation ( Li et al, 2019 ; Rajska et al, 2021 ):

…”

Section: Resultsmentioning

confidence: 95%

Electrochemical Mechanism of the Preparation of High-Purity Indium by Electrodeposition

Hou

Wang

et al. 2022

Front. Chem.

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Indium is a crucial material and is widely used in high-tech industries, and electrodeposition is an efficient method to recover rare metal resources. In this work, the electrochemical behavior of In3+ was investigated by using different electrochemical methods in electrolytes containing sodium and indium sulfate. Cyclic voltammetry (CV), chronoamperometry (CA), and alternating current impedance (EIS) techniques were used to investigate the reduction reaction of In3+ and the electrocrystallization mechanism of indium in the indium sulfate system. The cyclic voltammetry results showed that the electrodeposition process is irreversible. The average charge transfer coefficient a of In3+ was calculated to be 0.116 from the relationship between the cathodic peak potential and the half-peak potential, and the H+ discharge occurred at a higher negative potential of In3+. The nucleation mechanism of indium electrodeposition was analyzed by chronoamperometry. The mechanism of indium at potential steps of −0.3 to −0.6 V was close to diffusion-controlled instantaneous nucleation with a diffusion coefficient of 7.31 × 10−9 cm2 s−1. The EIS results demonstrated that the reduction process of In3+ is subject to a diffusion-controlled step when pH = 2.5 and the applied potential was −0.5 V. SEM and XRD techniques indicated that the cathodic products deposited on the titanium electrode have excellent cleanliness and purity.

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“…Chemical vapor deposition (CVD) techniques are frequently used to obtain thin films from a variety of materials. Various CVDs also use organometallic precursors (MOCVD) [22,28], atomic layer deposition (ALD) [29], and electrodeposition [30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Electrochemistry of Thin Films and Nanostructured Materials

Sulka

2023

Molecules

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In the last few decades, the development and use of thin films and nanostructured materials to enhance physical and chemical properties of materials has been common practice in the field of materials science and engineering. The progress which has recently been made in tailoring the unique properties of thin films and nanostructured materials, such as a high surface area to volume ratio, surface charge, structure, anisotropic nature, and tunable functionalities, allow expanding the range of their possible applications from mechanical, structural, and protective coatings to electronics, energy storage systems, sensing, optoelectronics, catalysis, and biomedicine. Recent advances have also focused on the importance of electrochemistry in the fabrication and characterization of functional thin films and nanostructured materials, as well as various systems and devices based on these materials. Both cathodic and anodic processes are being extensively developed in order to elaborate new procedures and possibilities for the synthesis and characterization of thin films and nanostructured materials.

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Investigation of electrodeposition kinetics of In, Sb, and Zn for advanced designing of InSb and ZnSb thin films

Cited by 5 publications

References 59 publications

Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

Electrochemical Mechanism of the Preparation of High-Purity Indium by Electrodeposition

Electrochemistry of Thin Films and Nanostructured Materials

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