2020
DOI: 10.1016/j.apsusc.2020.146188
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Investigation of electronic properties and chemical interactions of graphene-MoSx composites

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Cited by 9 publications
(5 citation statements)
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“…Moieties, such as unsaturated sulphur atoms in MoS x lattice, have been assigned at similar binding energies (163.5 eV), as the one of CÀ S bonding type. [41] The third component at ~168 eV was assigned to sulfur-oxide species at the surface.…”
Section: Resultsmentioning
confidence: 99%
“…Moieties, such as unsaturated sulphur atoms in MoS x lattice, have been assigned at similar binding energies (163.5 eV), as the one of CÀ S bonding type. [41] The third component at ~168 eV was assigned to sulfur-oxide species at the surface.…”
Section: Resultsmentioning
confidence: 99%
“…While graphene exhibits a gapless band structure [7], in particular, 2H-MoS 2 can tune its band structure by simply adjusting the number of packed layers along the basal direction [103]. Like other TMDC materials, MoS 2 features inert basal planes and active sulfur edge-sites, and increasing the density of these ligands can enhance both their chemical and electronic properties [104][105][106][107]. The intrinsic properties of layered MoS 2 are dependent on its layer number and it could be related to the reduction in vdW interactions, which is one of the main reasons why this dichalcogenide-layered material is of great interest [108].…”
Section: Main Types Of Layered Tmdcs and Their Characteristicsmentioning
confidence: 99%
“…Another possibility is the use of graphene on the top, in a semiconducting 2D materials class [107]. The issue, in this case, is the control and preservation of a high-quality interface during the graphene transfer [300].…”
Section: -Based Heterostructuresmentioning
confidence: 99%
“…In addition to functionalization of TMDs by physisorption or chemisorption of atoms atop TMD surfaces (discussed in section 4), foreign atoms can dope the TMD structure by replacing metal or chalcogen atoms. 208,427,428 In addition to conventional solution-based processes, 429−431 plasma treatment is a promising technique to modify the electronic structure of 2D TMDs through either in situ or ex-situ doping, as schematically shown in Figures 14a and b. In-situ doping approaches rely on introducing the adatoms to the structure during the fabrication process without the need for any extra steps.…”
Section: Dopingmentioning
confidence: 99%
“…In addition to functionalization of TMDs by physisorption or chemisorption of atoms atop TMD surfaces (discussed in section ), foreign atoms can dope the TMD structure by replacing metal or chalcogen atoms. ,, In addition to conventional solution-based processes, plasma treatment is a promising technique to modify the electronic structure of 2D TMDs through either in situ or ex-situ doping, as schematically shown in Figures a and b. In-situ doping approaches rely on introducing the adatoms to the structure during the fabrication process without the need for any extra steps. Although adatoms may become well-distributed through the structure, the doping processes and mechanisms are not controllable and well-understood. , In contrast, ex-situ processes rely on separate steps to modify the surface and to insert the adatoms into the structure .…”
Section: Dopingmentioning
confidence: 99%