Investigation of epitaxial lift-off the InGaAs p–i–n photodiodes to the AlAs/GaAs distributed Bragg reflectors

Yang, Chi-Da; Ho, Chong-Long; Wu, Min-Lin; Su, Juh-Yuh; Ho, Wen‐Jeng; Wu, Meng‐Chyi

doi:10.1016/s0038-1101(03)00130-8

Cited by 7 publications

(7 citation statements)

References 14 publications

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“…There is a significant cost to implement these technologies, and it is not clear that these are scalable and cost-effective solutions to ultralarge-scale nano-optoelectronics. Techniques, such as wafer bonding [36]- [40], epitaxial liftoff [41], [42], and heteroepitaxy [43], [44], have been developed to augment the device performance and offer new capabilities in CMOS integration. However, underlying high cost, lack of substrate flexibility, interface defects, vacancies, and traps caused by material mismatch [45], [46] remain as big challenges.…”

Section: Traditional Heterogeneous Integrationmentioning

confidence: 99%

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran

Nayak

et al. 2011

IEEE J. Select. Topics Quantum Electron.

141

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Abstract-One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in the research community due to their ease of synthesis and unique optical, mechanical, electrical, and thermal properties. Specifically, the physics and technology of NW PDs offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative index metamaterials devices. The successful integration of these NW PDs on CMOS-compatible substrates and various low-cost substrates via direct growth and transfer-printing techniques would further enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this paper, we review the unique advantages of NW-based PDs, current device integration schemes and practical strategies, recent device demonstrations in lateral and vertical process integration with methods to incorporate NWs in PDs via direct growth (nanoepitaxy) methods and transfer-printing methods, and discuss the numerous technical design challenges. In particular, we present an ultrafast surface-illuminated PD with 11.4-ps full-width at half-maximum (FWHM), edge-illuminated novel waveguide PDs, and some novel concepts of light trapping to provide a full-length discussion on the topics of: 1) low-resistance contact and interfaces for NW integration; 2) high-speed design and impedance matching; and 3) CMOS-compatible massmanufacturable device fabrication. Finally, we offer a brief outlook into the future opportunities of NW PDs for consumer and military application.

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Section: Traditional Heterogeneous Integrationmentioning

confidence: 99%

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Logeeswaran

Nayak

et al. 2011

IEEE J. Select. Topics Quantum Electron.

141

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“…In most cases, they also serve as the final carrier substrate for the fabricated devices, further increasing the weight and materials cost, and retaining the substrate's brittleness and rigidity [2]. There have been a few notable research demonstrations on heterogeneous integration of monocrystalline semiconductor materials for applications in integrated optoelectronics [3][4][5][6][7] and solar cells [8][9][10] using techniques such as epitaxial lift-off [11,12], wafer bonding [13][14][15] and heteroepitaxy [16][17][18][19][20][21][22][23]. These methods allow for some highperformance devices, but increase their cost-to-performance ratio (CPR) due to formidable technological challenges and limitations with these methods.…”

Section: Introductionmentioning

confidence: 99%

Electrically conducting film of silver sub-micron particles as mechanical and electrical interfaces for transfer printed micro- and nano-pillar devices

2013

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In this paper we report a novel application of electrically conductive film (ECF) of Ag sub-micron particles that includes both isotropic and anisotropic film technologies in providing simultaneous electrical contact and mechanical anchor between fracture transfer-printed (1-D) single crystal semiconductor micro-and nano-pillars and a carrier substrate. We assembled silver sub-micron particles (AgSP) monolayers with varying particle diameters and investigated their optical and electrical characteristics prior to their incorporation into thermoplastic polymers. It was found that transfer-printing of the Si micropillar arrays, into electrically conductive thermoplastic receiver substrates, made of films of AgSP/PMMA blends atop metallic substrates could be effectively achieved to yield electrically interfaced 1-D Si micropillar arrays with retention of their orientation and integrity according to the SEM images. The carrier substrate can potentially be reused to generate additional Si micropillar arrays that can be similarly harvested.

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“…with different physical, electrical and optical characteristics on a single substrate. Some of the integration methods that have been demonstrated include wafer bonding [1][2], epitaxial liftoff [3][4][5], direct growth [6,7] and transfer printing [8][9][10]. Heterogeneous integration has been facilitated by the introduction of structures in the form of crystalline semiconductor micro/nano-wires/pillars/rods as the active materials.…”

Section: Introductionmentioning

confidence: 99%

Electrical Contact Characteristics between Silicon Micropillars and Ag Nanoparticles with Controlled Mechanical Load

et al. 2012

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We report an experimental investigation on employing Ag nanoparticles to provide electrical and mechanical contacts between transfer-printed semiconductor devices in the shape of micro/nano-wires and pillars. The Ag nanoparticles have diameters ranging between 200-800nm and are assembled on a 200nm Au film deposited on glass substrates. With a customized tool, an ensemble of silicon pillars were brought into contact with the silver (Ag) nanoparticles (AgNPs) by precisely controlling the displacement and applied force (pressure). Current-voltage measurements were done at force resolution of ~0.2N. The test method aims to illuminate the pillar-particle contact mechanism using the nanoparticles as conductive fillers for the next generation of high performance heteroepitaxial device transfer-printing applications.

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Investigation of epitaxial lift-off the InGaAs p–i–n photodiodes to the AlAs/GaAs distributed Bragg reflectors

Cited by 7 publications

References 14 publications

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

Electrically conducting film of silver sub-micron particles as mechanical and electrical interfaces for transfer printed micro- and nano-pillar devices

Electrical Contact Characteristics between Silicon Micropillars and Ag Nanoparticles with Controlled Mechanical Load

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