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Articles you may be interested inInfluence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures J. Appl. Phys. 109, 073106 (2011); 10.1063/1.3569848 1.3 μ m Ga 0.11 In 0.89 As 0.24 P 0.76 ∕ Ga 0.27 In 0.73 As 0.67 P 0.33 compressive-strain multiple quantum well with n -type modulation-doped GaInP intermediate-barrier laser diodes Luminescence and lasing in InGaN ∕ GaN multiple quantum well heterostructures grown at different temperatures Appl. Phys. Lett. 85, 5158 (2004); 10.1063/1.1830076 650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine Appl. Phys. Lett. 83, 596 (2003); 10.1063/1.1593782Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriersIn this article, we report on the growth of 1.3-m-compressive-strain GaInAsP/InP multiple-quantum-well laser diodes ͑CS-MQW LDs͒ with a tensile-strain GaInP quantum barrier ͑GaInP-QB͒ in the separate-confinement-heterostructure ͑SCH͒ regions. Observed via the photoluminescence ͑PL͒ spectra, the optimum Ga composition of Ga x In 1Ϫx P-QB, GaInP-QB thickness, and pair number of the Ga x In 1Ϫx P-QB are 0.09, 5 nm thick and one pair, respectively. The optimum GaInP-QB structure in the p-side SCH region exhibits the narrowest PL full width at half maximum of 43.1 meV, the lowest threshold current of 23 mA, and the highest characteristic temperature of 52 K for the as-cleaved LDs with a 600-m-cavity length and a 3.5-m-wide ridge stripe. This low threshold current is better than that of the LDs with GaInP-QB in the n-side SCH region and that of the conventional LDs without GaInP-QB.