Investigation of frequency dependent and independent dielectric maxima in relaxor ferroelectric thin films

Correa, Margarita; Kumar, Ashok; Katiyar, R. S.

doi:10.1063/1.2773761

Cited by 16 publications

(19 citation statements)

References 21 publications

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“…The value of calculated from the slot of the curve is found to be 1.88 which reveals the near-relaxor nature of BBiT ceramics. An empirical Vogel-Fulcher relationship [29] is used to account the dielectric relaxation nature in relaxor ferroelectrics. The variation of frequency of ac field with T m is given as:…”

Section: Resultsmentioning

confidence: 99%

Dielectric and relaxor behavior of BaBi4Ti4O15 ceramics

Bobić¹,

Vijatović²,

Greicius

et al. 2010

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 99%

Dielectric and relaxor behavior of BaBi4Ti4O15 ceramics

Bobić¹,

Vijatović²,

Greicius

et al. 2010

Journal of Alloys and Compounds

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“…24 Other models assume the transition to occur in all regions of the crystal, which is so composed of low symmetry nanodomains separated by domain walls. 25 Different approaches 26,27 have been used to express the distribution of transition temperatures. The relaxor character can be induced by doping, as can be seen in Bi-doped SrTiO 3 .…”

mentioning

confidence: 99%

Relaxor behavior in multiferroic BiMn2O5 ceramics

Fier¹,

Walmsley²,

Souza

2011

Journal of Applied Physics

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In polycrystalline BiMn 2 O 5 , a broad thermal stimulated depolarization current curve has been observed in the range from 10 K to 300 K and the pyroelectric coefficient determined. In magnetic susceptibility measurements reported in the literature, features appearing in the pyroelectric coefficient could also be identified for the same temperatures, suggesting a connection between electric and magnetic data above the Néel temperature. A detailed study of the dielectric constant from 240 K to 700 K for an extended range of frequencies revealed a broad maximum at low frequencies, characteristic of relaxor ferroelectrics, following Vogel-Fulcher relation. A freezing temperature of the polar nanoregions T f ¼ 512 K has been determined. This high temperature ferroelectric behavior is attributed to the Bi 3þ in the distorted BiO 8 cage.

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“…We found a dielectric loss peak around 180 K close to the freezing temperature ( T f ). Above T m , the dielectric losses increased continuously and at 520 K, it exhibited a frequency‐independent peak (upper inset); detailed analyses have been given elsewhere 15 Figure 2(b). shows the temperature‐dependent dielectric loss of PSNT‐N (value and nature) indicating, first, an increase in the dielectric loss with an increase in temperature, reaching a maximum value at a particular temperature near the dielectric maximum temperature T m , beyond which it decreased, which supports the normal diffused ferroelectric phase transition (DFPT).…”

Section: Resultsmentioning

confidence: 99%

“…In thin films, the presence of surfaces, interfaces, the size of the nanoislands, film thickness, and interfacial strain effects further play crucial and decisive roles. For instance, relaxor thin films have a lower dielectric constant, a strong frequency dependence, and more shift of dielectric maximum temperature ( T m ) compared with the bulk samples 15,16 . From the application point of view, the materials must be prepared in thin‐film forms for possible integration with different devices.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, we carried out an extensive study of the dielectric and optical behavior of PbSc 0.5 Nb (1− x )/2 Ta x /2 O 3 (0≤ x ≤1) nanoceramics 20 and also observed frequency‐dependent and ‐independent dielectric relaxation phenomena in PbSc 0.5 Nb (1− x )/2 Ta x /2 O 3 ( x =0.5) (PSNT) thin films 15 . The phase diagram of PbSc 0.5 Nb (1− x )/2 Ta x /2 O 3 nanoceramics as a function of Ta concentration indicates that the x =0.5 is the cross‐over concentration from an RFE to a DPT ferroelectric of PSN and PST.…”

Section: Introductionmentioning

confidence: 99%

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Strain‐Induced Relaxor Behavior in PbSc_0.50Nb_0.25Ta_0.25O₃ Thin Films: A Comparison with Nanoceramics

Correa

Kumar

Katiyar

2008

Journal of the American Ceramic Society

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Comparative studies of the microstructure, micro‐Raman spectroscopy, and dielectric properties of PbSc0.50Nb0.25Ta0.25O3 (PSNT) thin films and nanoceramics were carried out over a wide range of temperature (100–520 K) and frequency (100 Hz to 1 MHz). The microstructure of PSNT films revealed an in‐plane compressive strain, whereas PSNT nanoceramics showed an average grain size of 10–15 nm although these nanoordered regions are not capable of producing relaxor behavior. We have observed a shift of 65 K in the dielectric maxima temperature in PSNT films toward the lower temperature side compared with bulk, which confirms the in‐plane compressive strain in the films. We have proposed a dielectric model to calculate the shift in dielectric maxima temperature. Using our experimental data of PSNT thin films, the theoretical model predicted a shift of 62 K in the dielectric maxima temperature, which matched well with our experimental observation. The modified Curie–Wiess law showed a broad relaxation (γ∼2) and a higher disorder level (δ=90 K) for PSNT thin films compared with PSNT nanoceramics having γ∼1.60 and δ=15 K. Well‐behaved hysteresis loops were observed in a broad temperature range for PSNT thin films and slim hysteresis for nanoceramics, indicating a relaxor ferroelectric and diffused ferroelectric phase transition (DFPT) nature, respectively. The temperature‐dependent micro‐Raman spectroscopy revealed that the ferroelectric state in PSNT nanoceramics was accompanied by the appearance of a new peak as a shoulder at ∼80 cm−1 to the lowest F2g mode ∼57 cm−1. Its half‐widths and intensity reduced to zero near the phase transition temperature, whereas the A1g mode showed a doublet namely at (805 and 830 cm−1) below DFPT and an intermediate singlet frequency at 820 cm−1 above DFPT. The micro‐Raman spectra for the thin film matched quite well with the nanoceramics, except that the missing second F2g mode at ∼360 cm−1 was interpreted due to a shorter coherence length in the dipole arrangement in thin films. The in‐plane compressive strain, dipole arrangement, and the size of the nanoordered regions vary the dielectric response of the PSNT films compared with the nanoceramics.

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Investigation of frequency dependent and independent dielectric maxima in relaxor ferroelectric thin films

Cited by 16 publications

References 21 publications

Dielectric and relaxor behavior of BaBi4Ti4O15 ceramics

Dielectric and relaxor behavior of BaBi4Ti4O15 ceramics

Relaxor behavior in multiferroic BiMn2O5 ceramics

Strain‐Induced Relaxor Behavior in PbSc_0.50Nb_0.25Ta_0.25O₃ Thin Films: A Comparison with Nanoceramics

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Investigation of frequency dependent and independent dielectric maxima in relaxor ferroelectric thin films

Cited by 16 publications

References 21 publications

Dielectric and relaxor behavior of BaBi4Ti4O15 ceramics

Dielectric and relaxor behavior of BaBi4Ti4O15 ceramics

Relaxor behavior in multiferroic BiMn2O5 ceramics

Strain‐Induced Relaxor Behavior in PbSc0.50Nb0.25Ta0.25O3 Thin Films: A Comparison with Nanoceramics

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Strain‐Induced Relaxor Behavior in PbSc_0.50Nb_0.25Ta_0.25O₃ Thin Films: A Comparison with Nanoceramics