Articles you may be interested inStructure, piezoelectric, and ferroelectric properties of BaZrO3 substituted Bi(Mg1/2Ti1/2)O3-PbTiO3 perovskite ͑Pb 1−x Ba x ͒ZrO 3 ͑PBZ͒ ͑0 Յ x Յ 0.5͒ thin films were successfully fabricated on Pt͑111͒ / TiO 2 / SiO 2 / Si substrates by the sol-gel technique, and the influence of the Ba 2+ content on the microstructure, electrical properties, and phase transformation behavior of PBZ films was investigated in detail. With the increase in Ba 2+ concentration, the orientation of the PBZ films was changed from ͑111͒ to ͑110͒ gradually. Simultaneously the grain size of the films decreased, and the surface became more and more homogeneous and uniform. The room-temperature state of PBZ thin films experienced a transformation from an antiferroelectric to a ferroelectric phase and then to a paraelectric phase with the increase in Ba 2+ content. The typical ferroelectric relaxor behavior was observed due to the Ba 2+ substitution, and the degree of the relaxor behavior was enhanced with the increase in Ba 2+ content.