Investigation of gamma-radiation on electronic and optical properties in carbon δ-doping GaAs/AlGaAs HEMTs structures

Daoudi, M.; Hosni, F.

doi:10.1016/j.ijleo.2016.05.057

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“…近年来，国外众多研究团队纷纷报道了辐照对各种 HEMT 器件的影响，其中辐照源包括质子、电子、中子、γ 射线、α 粒子等，HEMT 器件主要包括 GaAs HEMT [10] 、GaN HEMT [11] 、InP HEMT [12] 、InAs/AlSb HEMT [13] . Pearton 等人发现电子辐照会导致 Ga HEMT 二维电子气面密度和电子迁移率减小，阈值电压正向漂移，同时漏电流和跨导退化 [14] .…”

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Structure parameters design of InP HEMT epitaxial materials to improve the radiation-hardened ability

湖北文理学院¹,

中国科学院微系统与信息技术研究所²,

中国科学院新疆理化技术研究所³

et al. 2021

Acta Physica Sinica

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Structure parameters design of InP HEMT epitaxial materials to improve the radiation-hardened ability

湖北文理学院¹,

中国科学院微系统与信息技术研究所²,

中国科学院新疆理化技术研究所³

et al. 2021

Acta Physica Sinica

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Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability

Zhou¹,

Ren-Feng²,

Yan-Feng³

et al. 2022

Acta Phys. Sin.

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In order to improve the radiation-resistance ability of the InP based high electron mobility transistor (InP HEMT) by optimizing the epitaxial structure design, a series of InP HEMT epitaxial structure materials with different structure parameters is grown by gas source molecular beam epitaxy. These samples are irradiated at room temperature by a 1.5-MeV electron beam at the same irradiation fluence of 2 × 10<sup>15</sup> cm<sup>–2</sup>. The electrical properties of the two-dimensional electron gas (2DEG) for InP HEMT epitaxial materials before and after irradiation are measured by Hall measurements to obtain the changes of the normalized 2DEG density and electron mobility along with the epitaxial structure parameters. The relation between 2DEG radiation damage and epitaxial structure parameters (such as Si-δ-doping density, spacer thickness, channel thickness and channel In content) of InP HEMT epitaxial structure materials is analyzed. The results show that the 2DEG of the InP HEMT epitaxial structure material with higher Si-δ-doping density, thinner spacer thickness, thicker channel thickness and lower channel In content has lower radiation damage, which possesses the stronger radiation-resistance ability.

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Investigation of gamma-radiation on electronic and optical properties in carbon δ-doping GaAs/AlGaAs HEMTs structures

Cited by 2 publications

References 26 publications

Structure parameters design of InP HEMT epitaxial materials to improve the radiation-hardened ability

Structure parameters design of InP HEMT epitaxial materials to improve the radiation-hardened ability

Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability

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