Investigation of GeO2 thin film properties for improvement of temperature coefficient of frequency of SAW devices

Knapp, Matthias; Jager, Philipp; Hauser, Markus; Rosler, U.; Ruile, W.; Scheinbacher, G.; Honal, Matthias; Bleyl, Ingo; Reindl, L.

doi:10.1109/eftf.2014.7331484

Cited by 3 publications

(1 citation statement)

References 11 publications

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“…For many SAW device applications demanding high-temperature stability, such as wireless communications and sensors, a TCF close to zero is expected. Since commonly used piezoelectric materials have a negative TCF, one approach for temperature compensation is to produce a layered structure of piezoelectric materials with positive TCF materials such as GeO 2 , SiO 2 and TeO 2 [15][16][17]. This could make a zero TCF layered structure.…”

Section: Introductionmentioning

confidence: 99%

High-frequency and high-temperature stable surface acoustic wave devices on ZnO/SiO₂/SiC structure

Lu¹,

Fu²,

Chen³

et al. 2020

J. Phys. D: Appl. Phys.

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The explosive growth of wireless communication and the creation of new frequency bands for 5G systems increasingly require surface acoustic wave (SAW) with high operating frequency (i.e. 3–6 GHz) as well as high-temperature stability. In this work, high-frequency and high-temperature stable SAW devices using ZnO/SiO2/SiC layered structures were proposed and reported. SAW characteristics of the Sezawa wave mode, including the phase velocities (Vp), electromechanical coupling coefficients (K2) and temperature coefficient of frequency (TCF), were studied systematically by the finite element method. High-frequency SAW one-port resonators with the resonant frequency ranging from ∼4.5–5.4 GHz were fabricated on the above structures. With SiC substrate providing high velocity and SiO2 interlayer for temperature compensation, a 5.0 GHz and nearly zero TCF of 0.7 ppm °C−1 can be achieved in a SAW device based on ZnO/SiO2/SiC structure. The good performance of these devices demonstrates that the ZnO/SiO2/SiC structure is promising for high-frequency and good temperature-stability SAW device applications.

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Section: Introductionmentioning

confidence: 99%

High-frequency and high-temperature stable surface acoustic wave devices on ZnO/SiO₂/SiC structure

Lu¹,

Fu²,

Chen³

et al. 2020

J. Phys. D: Appl. Phys.

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Analysis of GAA SNTFT with Different Dielectric Materials

Sampson

Kumar

Velmurugan

2020

2020 5th International Conference on Devices, Circuits and Systems (ICDCS)

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Simulation and Optimization of Surface Acoustic Wave Devices With High Electromechanical Coupling Factor and Zero Temperature Coupling Coefficient by Pattern Piezoelectric Layer

Dun

Wang

et al. 2023

IEEE Sensors J.

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Investigation of GeO2 thin film properties for improvement of temperature coefficient of frequency of SAW devices

Cited by 3 publications

References 11 publications

High-frequency and high-temperature stable surface acoustic wave devices on ZnO/SiO₂/SiC structure

High-frequency and high-temperature stable surface acoustic wave devices on ZnO/SiO₂/SiC structure

Analysis of GAA SNTFT with Different Dielectric Materials

Simulation and Optimization of Surface Acoustic Wave Devices With High Electromechanical Coupling Factor and Zero Temperature Coupling Coefficient by Pattern Piezoelectric Layer

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Investigation of GeO2 thin film properties for improvement of temperature coefficient of frequency of SAW devices

Cited by 3 publications

References 11 publications

High-frequency and high-temperature stable surface acoustic wave devices on ZnO/SiO2/SiC structure

High-frequency and high-temperature stable surface acoustic wave devices on ZnO/SiO2/SiC structure

Analysis of GAA SNTFT with Different Dielectric Materials

Simulation and Optimization of Surface Acoustic Wave Devices With High Electromechanical Coupling Factor and Zero Temperature Coupling Coefficient by Pattern Piezoelectric Layer

Contact Info

Product

Resources

About

High-frequency and high-temperature stable surface acoustic wave devices on ZnO/SiO₂/SiC structure

High-frequency and high-temperature stable surface acoustic wave devices on ZnO/SiO₂/SiC structure