Investigation of helium implantation induced blistering in InP

Singh, Rajendra; Radu, Ionut; Scholz, Roland; Himcinschi, Cameliu; Gösele, U.; Christiansen, Silke

doi:10.1016/j.jlumin.2006.08.073

Cited by 14 publications

(22 citation statements)

References 17 publications

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“…of other semiconductors such as Si, SiGe, GaAs, InP and GaN [11][12][13][14][15][16][17]. As in other semiconductors, the lower activation energy appears to be correlated with the free atomic diffusion of hydrogen in the AlN lattice while the higher activation energy seems to be related to the diffusion of hydrogen limited by trapping-detrapping phenomena in the AlN [18].…”

Section: Resultsmentioning

confidence: 90%

Investigation of blistering kinetics in hydrogen implanted aluminium nitride

Singh

Scholz

Christiansen

et al. 2008

Semicond. Sci. Technol.

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Epitaxial layers of aluminium nitride (AlN) grown on sapphire by hydride vapour phase epitaxy (HVPE) were implanted with 100 keV hydrogen, H + 2 , ions with doses in the range of 5 × 10 16 -2.5 × 10 17 cm −2 and subsequently annealed in ambient air at temperatures between 450 and 750• C in order to determine the kinetics of surface blister formation in AlN. The Arrhenius plot of the blistering time versus temperature shows two different activation energies for the formation of surface blisters: 0.44 eV in the higher temperature regime of 550-750• C and 1.16 eV in the lower temperature regime of 450-550• C. The implantation-induced damage was analyzed by cross-sectional transmission electron microscopy, which revealed a band of defects extending from 330 to 550 nm from the surface of AlN. The XTEM image of the implanted and annealed AlN displayed clearly the formation of microcracks that ultimately lead to the formation of surface blisters.

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Section: Resultsmentioning

confidence: 90%

Investigation of blistering kinetics in hydrogen implanted aluminium nitride

Singh

Scholz

Christiansen

et al. 2008

Semicond. Sci. Technol.

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“…The formation of microcracks in the as-implanted state was probably responsible for the large area exfoliation observed after high temperature annealing. It is to be noted that the minimum implantation fluence required to observe blistering/exfoliation in GaN, AlN and ZnO after post-implantation annealing is quite higher than that for other semiconductors such as Si, SiC, InP and GaAs (for these semiconductors the minimum fluence is usually about 1.0×10 17 cm −2 ) [10,[19][20][21]. Specifically for ZnO the minimum fluence is about 5 times higher than that for Si or SiC.…”

Section: Resultsmentioning

confidence: 96%

Study of implantation‐induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications

Singh

Dadwal

Scholz

et al. 2010

Phys. Status Solidi (c)

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We present an overview of the implantation‐induced blistering/exfoliation process in wide bandgap semiconductors such as GaN, AlN and ZnO. These semiconductors were implanted with 50 keV hydrogen ions at various fluences and subsequently annealed at higher temperatures up to 800 °C in order to trigger surface blistering. In the case of GaN and AlN, a detailed blistering kinetics investigation was also performed. Various techniques such as optical microscopy, atomic force microscopy, cross‐sectional transmission electron microscopy and stylus profilometry were used for the characterization of the implanted samples. In the case of room temperature implanted samples, it was observed that the damage band formed inside the samples was decorated with hydrogen filled nanovoids. These nanovoids served as precursors for the formation of two‐dimensional extended defects called nanocracks and microcracks upon annealing and eventually led to surface blistering or exfoliation. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…XTEM image of the damage band of 100 keV He implanted InP with a fluence of 5 × 10 16 cm -2 and annealed at 250 °C for 25 min . Reprinted with permission from Singh et al, (2006), Elsevier He ion implantation in combination with direct wafer bonding was also used for the transfer of InP layer onto Si. It results in the formation of InP-on-insulator engineered substrate.…”

Section: Inpmentioning

confidence: 99%