Investigation of Hydration Reaction-Induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors

Jhu, Jhe-Ciou; Chang, Ting‐Chang; Chang, Kuan‐Chang; Yang, Chung‐Yi; Chou, Wu–Ching; Chou, Cheng-Hsu; Chung, Wang-Cheng

doi:10.1109/led.2015.2466103

Cited by 7 publications

(4 citation statements)

References 9 publications

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“…However, the 1 st -stage won't last long, because at the interface the amount of H 2 O molecules and Si − OH bonds are limited. Our model is consistent with previous observations that moisture can cause V th shift in poly-Si and a-IGZO TFTs [19], [20]. The 1 st -stage degradation occurs only in part of the a-IGZO TFTs, which is thought to be affected by some moisture unintentionally introduced during the fabrication process before SiN x passivation layer is covered.…”

Section: A Unified Degradation Model Of Nbs and Nbis A Nbssupporting

confidence: 91%

A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination

Wang

Zhang

et al. 2019

IEEE J. Electron Devices Soc.

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Degradation behaviors of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under negative bias stress (NBS) and negative bias illumination stress (NBIS) are investigated systematically. In some cases, a two-stage degradation behavior of a-IGZO TFTs is observed under both NBS and NBIS, which begins with a small positive shift of threshold voltage (V th), and is followed by a large negative V th shift. There is an intrinsic correlation between the degradations of NBS and NBIS. Quantitatively, both stress gate biases (V G) and temperature dependencies of V th of the two degradations are found to be the same and the recovery processes are also very similar. A unified model of NBS and NBIS is proposed to consistently explain the degradation behaviors of a-IGZO TFTs and their correlation. INDEX TERMS a-InGaZnO, thin-film transistors (TFTs), degradation, light illumination, gate bias stress.

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Section: A Unified Degradation Model Of Nbs and Nbis A Nbssupporting

confidence: 91%

A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination

Wang

Zhang

et al. 2019

IEEE J. Electron Devices Soc.

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“…So, the influence of H 2 O becomes apparent at the beginning. The positive Δ V TH is possibly due to the hydration-reaction-induced proton transport, which is related to the absorbed H 2 O on the surface of the device . After a bias for 3600 s, the final Δ V TH is −1.09 V in atmosphere and 0.04 V in a vacuum of 1.8 × 10 –4 Pa. Also, the SS value increases slightly during the NBS.…”

Section: Results and Discussionmentioning

confidence: 98%

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor

Xiao

Zhang

Shao

et al. 2017

ACS Appl. Mater. Interfaces

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A room-temperature flexible amorphous indium-gallium-zinc oxide thin film transistor (a-IGZO TFT) technology is developed on plastic substrates, in which both the gate dielectric and passivation layers of the TFTs are formed by an anodic oxidation (anodization) technique. While the gate dielectric AlO is grown with a conventional anodization on an Al:Nd gate electrode, the channel passivation layer AlO is formed using a localized anodization technique. The anodized AlO passivation layer shows a superior passivation effect to that of PECVD SiO. The room-temperature-processed flexible a-IGZO TFT exhibits a field-effect mobility of 7.5 cm/V·s, a subthreshold swing of 0.44 V/dec, an on-off ratio of 3.1 × 10, and an acceptable gate-bias stability with threshold voltage shifts of 2.65 and -1.09 V under positive gate-bias stress and negative gate-bias stress, respectively. Bending and fatigue tests confirm that the flexible a-IGZO TFT also has a good mechanical reliability, with electrical performances remaining consistent up to a strain of 0.76% as well as after 1200 cycles of fatigue testing.

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“…With applying positive bias on the top gate, more H + ions electrolyzed from H 2 O in the GI. The created H + ions move toward the a-IGZO channel and can penetrate the a-IGZO barrier [39], and the OH − ions move toward the gate metal [40]. Since the OH − ions move toward the top gate metal, the OH − ions near the gate metal have little effect on V t shift.…”

Section: Resultsmentioning

confidence: 99%

Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

Lee

Chiu

et al. 2022

IEEE J. Electron Devices Soc.

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The mobility enhancement and the positive bias stress of top-gate self-aligned TFTs using the a-IGZO channel with a front barrier are investigated. The a-IGZO front barrier can keep electrons in the a-IGZO channel away from the top-gate oxide to significantly enhance the electron mobility at the top gate operation. The parasitic channel induces a hump in the transfer characteristics. The positive bias stress shifts the hump to the negative voltage abnormally. The H 2 O in the polymer film on array layer is responsible for the abnormal shift. The H 2 O diffuses into the top-gate insulator and is electrolyzed to create H + , which forms a parasitic channel with a negative shift of threshold voltage, leading to the abnormal hump. The abnormal humps are increasingly significant with the increasing channel width and the decreasing channel length. The channel width dependence on positive bias stress is due to the inverse narrow width effect caused by the fringe electric field. The channel length dependence on positive bias stress is due to the H + diffusion toward the center of the parasitic channel from both the source and drain sides.INDEX TERMS Positive bias stress (PBS), a-IGZO, hump, polymer film on array (PFA).

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Investigation of Hydration Reaction-Induced Protons Transport in Etching-Stop a-InGaZnO Thin-Film Transistors

Cited by 7 publications

References 9 publications

A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination

A Unified Degradation Model of a-InGaZnO TFTs Under Negative Gate Bias With or Without an Illumination

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor

Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs

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