Materials Science in Semiconductor Processing
 2015
DOI: 10.1016/j.mssp.2014.09.035
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Investigation of impact ionization and flicker noise properties in indium aluminum arsenide/indium gallinum arsenide metamorphic high electron mobility transistors with various work function-gate metals

Hsien‐Chin Chiu
1
,
Chia-Hsuan Wu
2
,
Che-Kai Lin
3
et al.
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