High-temperature dielectric ceramics are required for various emerging applications. However, controlling the dielectric loss at high temperatures remains a significant challenge due to the substantial leakage current at high temperatures. In this work, 0.76Bi 0.5 Na 0.5 TiO 3 −0.2NaNbO 3 −0.04Sr(ZrMg x )O 3+x (BNT−NN−SZM x ) lead-free ceramics were constructed by introducing trace MgO to suppress the space charge migration, reduce the leakage current, and enhance the breakdown strength of the ceramic. The BNT−NN−SZM 0.05 ceramic showed excellent stability in dielectric permittivity with temperature (Δε/ε 25°C ≤ ±15% from −63 to 363 °C) along with low dielectric loss (tan δ ≤ 0.02 from −41 to 330 °C), with a high room-temperature dielectric permittivity of 1150. Besides, the BNT−NN−SZM 0.25 ceramic achieved a high discharge energy density (W dis ) of 5.2 J/cm 3 under an applied electric field of 370 kV/cm, with a high energy efficiency of 85%. In addition, BNT−NN−SZM 0.25 exhibited outstanding stability in energy density with temperature, with W dis varying less than 7% over a wide temperature range from 25 to 200 °C. The design strategy demonstrated in this work may be applied to design high-temperature dielectric ceramics for energy storage and dielectric applications.