2016
DOI: 10.1016/j.apsusc.2015.12.151
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Investigation of interdiffusion and depth resolution in Cu/Ni multilayers by means of AES depth profiling

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Cited by 14 publications
(2 citation statements)
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“…In turn, AES examinations showed that annealing Cu/Ni multilayers (325-375°C for 30 min.) caused a mutual diffusion of the components only at the interface closest to the silicon substrate [42].…”
Section: Introductionmentioning
confidence: 99%
“…In turn, AES examinations showed that annealing Cu/Ni multilayers (325-375°C for 30 min.) caused a mutual diffusion of the components only at the interface closest to the silicon substrate [42].…”
Section: Introductionmentioning
confidence: 99%
“…Epitaxial growth of magnetic thin films enables the precise control of strain and crystal orientation, both of which have critical effects on the magnetization of thin films . Another important benefit of epitaxial growth is limiting the grain boundary diffusion, which is shown to play a critical role in interlayer diffusion of the multilayer ultrathin films . In order to fully realize the benefits of the ultrathin magnetic films, they need to be grown in an epitaxial fashion with a fine‐tuned crystal structure and orientation.…”
Section: Introductionmentioning
confidence: 99%