Investigation of interface quality and passivation improvement with a-SiO:H deposited by ECRCVD at low temperature

Chu, Yen-Ho; Lee, Chien Chieh; Chang, Teng-Hsiang; Hsieh, Yu-Lin; Liu, Shian-Ming; Chang, Jenq Yang; Li, Tomi T.; Chen, I-Chen

doi:10.1016/j.jnoncrysol.2014.12.032

Cited by 4 publications

(3 citation statements)

References 30 publications

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“…The distinct tolerances to crystallization characteristics of these structures were caused by their different oxygen concentrations. 24 Crosssectional TEM images of the NATURE contact before and after PDA at 750 °C are shown in Figure 3c,d, respectively. Figure 3e shows a magnification of the sample around the NATURE contact after PDA at 750 °C.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells

Tsubata

Gotoh

Matsumi

et al. 2022

ACS Appl. Nano Mater.

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This study describes the fabrication of silicon nanocrystals (Si NCs) in silicon oxide layers, which led to highperformance passivation and enhanced carrier transport in crystalline silicon (c-Si) solar cells. These Si NCs comprised nanocrystalline transport pathways in ultrathin dielectrics for reinforced passivating contact structures (NAnocrystalline Transport path in Ultrathin dielectrics for Reinforcing (NATURE) contacts). Si NCs were formed in silicon oxide layers by depositing hydrogenated amorphous silicon oxide (a-SiO x :H) with different oxygen concentrations, followed by postdeposition annealing (PDA). Based on microscopic images, the silicon oxide layer was maintained after PDA, and the Si NCs were formed in the silicon oxide matrix, leading to a relatively low recombination current (178.8 fA/cm 2 ) compared with simple a-SiO x :H layer structures. Furthermore, the contact resistivity for the NATURE contact was 13.1 mΩ•cm 2 , which was comparable to that of a single a-SiO x :H layer with a low oxygen concentration. The developed NATURE contact structure expands the design flexibility scope for various functional devices containing a passivation contact layer. It allows for the production of c-Si solar cells with passivating contacts using thicker dielectric layers for improved reliability and long-term stability.

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Section: ■ Results and Discussionmentioning

confidence: 99%

“…Therefore, the a-SiO y layer suppressed the crystallization from the c-Si substrate. The distinct tolerances to crystallization characteristics of these structures were caused by their different oxygen concentrations . Cross-sectional TEM images of the NATURE contact before and after PDA at 750 °C are shown in Figure c,d, respectively.…”

Section: Resultsmentioning

confidence: 99%

Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells

Tsubata

Gotoh

Matsumi

et al. 2022

ACS Appl. Nano Mater.

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“…It is known that the composition and structural characteristics of the films are critically dependent on the method of synthesis . Earlier, the film suboxide of silicon were synthesized by electron cyclotron resonance chemical vapor deposition (ECRCVD) , plasma‐enhanced CVD (PECVD) , inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) , very high frequency plasma enhanced chemical vapor deposition (VHF‐PECVD) , hot filament chemical vapor deposition (HFCVD) , and low pressure chemical vapor deposition (LPCVD) .…”

Section: Introductionmentioning

confidence: 99%

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

Баранов

Khmel

Zamchiy

et al. 2016

Physica Status Solidi (a)

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In this work, hydrogenated amorphous silicon suboxide (a‐SiOx:H) thin films have been prepared by gas‐jet electron beam plasma chemical vapor deposition method (GJ EBP CVD) at a substrate temperature 260 °C. The argon to monosilane ratio R = [Ar]/[SiH4] was varied and the influence of the ratio R on the structural and optical properties was investigated. In this method, R affects an oxygen concentration in the film of the silicon suboxide. FTIR measurement showed a decrease of the oxygen concentration from 40.7 to 11% with increasing R. The analysis of FTIR spectra showed the containing a large number polysilane (Si–H2)n groups that suggest the material column structure. Optical transmission spectra were recorded to investigate the optical properties and thickness of the a‐SiOx:H thin films. The maximum of the growth rate is 2 nm s−1 at R = 80. The optical bandgap Eg was derived from Tauc plots. It was found that the increase in the oxygen concentration not only leads to the increase optical bandgap, but also to the decrease the refraction index.

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An intrinsic amorphous silicon oxide and amorphous silicon stack passivation layer for crystalline silicon heterojunction solar cells

et al. 2017

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Investigation of interface quality and passivation improvement with a-SiO:H deposited by ECRCVD at low temperature

Cited by 4 publications

References 30 publications

Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells

Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells

Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method

An intrinsic amorphous silicon oxide and amorphous silicon stack passivation layer for crystalline silicon heterojunction solar cells

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Investigation of interface quality and passivation improvement with a-SiO:H deposited by ECRCVD at low temperature

Cited by 4 publications

References 30 publications

Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells

Silicon Nanocrystals Embedded in Nanolayered Silicon Oxide for Crystalline Silicon Solar Cells

Structural and optical properties of a‐SiOx:H thin films deposited by the GJ EBP CVD method

An intrinsic amorphous silicon oxide and amorphous silicon stack passivation layer for crystalline silicon heterojunction solar cells

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Product

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Structural and optical properties of a‐SiO_x:H thin films deposited by the GJ EBP CVD method