Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometry

Fried, M.; Lohner, T.; Jároli, E.; Vízkelethy, G.; Mezey, G.; Gyulai, J.; Somogyi, M.; Kerkow, H.

doi:10.1016/0040-6090(84)90423-1

Cited by 32 publications

(10 citation statements)

References 23 publications

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“…The complex refractive index used for a-Si is mentioned in Table I and has been determined in a more extensive study. 26 Note that the values for n and k used here are in good agreement with the values reported by Fried et al 15 (See Table I …”

Section: A Modelsupporting

confidence: 80%

“…The a-Si layer thickness for 1.05 keV Ar + ions determined by Buckner et al 16 is also included. Buckner used the complex refractive index determined by Fried et al 15 ( Table I). The difference between his result and ours is an indication of the difference in a-Si layer thickness resulting from the difference in complex refractive index.…”

Section: B A-si Layer Thicknessmentioning

confidence: 99%

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Surface roughness in XeF2 etching of a-Si∕c-Si(100)

Stevens

Beijerinck

2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Single wavelength ellipsometry and atomic force microscopy (AFM) have been applied in a well-calibrated beam-etching experiment to characterize the dynamics of surface roughening induced by chemical etching of a ϳ12 nm amorphous silicon ͑a-Si͒ top layer and the underlying crystalline silicon ͑c-Si͒ bulk. In both the initial and final phase of etching, where either only a-Si or only c-Si is exposed to the XeF 2 flux, we observe a similar evolution of the surface roughness as a function of the XeF 2 dose proportional to D͑XeF 2 ͒ ␤ with ␤ Ϸ 0.2. In the transition region from the pure amorphous to the pure crystalline silicon layer, we observe a strong anomalous increase of the surface roughness proportional to D͑XeF 2 ͒ ␤ with ␤ Ϸ 1.5. Not only the growth rate of the roughness increases sharply in this phase, also the surface morphology temporarily changes to a structure that suggests a cusplike shape. Both features suggest that the remaining a-Si patches on the surface act effectively as a capping layer which causes the growth of deep trenches in the c-Si. The ellipsometry data on the roughness are corroborated by the AFM results, by equating the thickness of the rough layer to 6 , with the root-mean-square variation of the AFM's distribution function of height differences. In the AFM data, the anomalous behavior is reflected in a too small value of which again suggests narrow and deep surface features that cannot be tracked by the AFM tip. The final phase morphology is characterized by an effective increase in surface area by a factor of two, as derived from a simple bilayer model of the reaction layer, using the experimental etch rate as input. We obtain a local reaction layer thickness of 1.5 monolayer consistent with the 1.7 ML value of Lo et al. [Lo et al., Phys. Rev. B 47, 648 (1993)] that is also independent of surface roughness.

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Section: A Modelsupporting

confidence: 80%

Section: B A-si Layer Thicknessmentioning

confidence: 99%

Surface roughness in XeF2 etching of a-Si∕c-Si(100)

Stevens

Beijerinck

2004

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The authors of the paper observed creation of amorphous layer and the change of the optical constants of the implanted layer. In [8,9] it was assumed that the optical parameters of the oxide layer covering the implanted surfaces were the same as for the virgin samples. In this paper we present the continuation of the study of implanted with indium GaAs.…”

Section: Introductionmentioning

confidence: 99%

Influence of ion beam on optical properties of GaAs: Calculation using the fractional‐derivative‐spectrum method

Kulik

Rzodkiewicz

Droździel

et al. 2011

Phys. Status Solidi (c)

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Semiconductor GaAs (100) was implanted with In+ at a room temperature. Fluences of implanted ions were from 1x 1012 cm‐2 to 3x1013 cm‐2 and the energy was equal to 85 keV. The detectability of the indium content in near surface layer of GaAs has been studied with the use of the secondary ion mass spectrometry (SIMS). The depths distribution of a indium concentration measured by SIMS method ware compared with depth profiles calculated with the help of SATVAL code. It was noticed that calculated profiles are in a good agreement with the measured values. Additionally, the concentration of indium in the near surface layer increased with growing of the implantation fluence and a maximum of these profiles shift in the side of ions exposed surfaces of GaAs. This effect can be explained by self‐diffusion process of target atoms and indium during the implantation. The fractional derivative spectrum (FDS) model in connection with spectroscopic ellipsometry ES was used for particular optical analyses of implanted GaAs substrates. The FDS is especially promising technique when the limitations of the standard treatment by Lorentz shape line analysis occur and it is very helpful to extract basic information on relevant physical quantities from the detected εE2(E) spectra determined by spectroscopic ellipsometry. In particular, using spectroscopic ellipsometry and FDS, the critical points E1 and E1+Δ observed in the εE2(E) spectra in the implanted substrates have been investigated. The differences in complex refractive index and dielectric function (ε=ε1+iε2) between GaAs substrate before and implantation were observed. Moreover, the several nanometres thick oxide layer on GaAs surface was detected. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Therefore, in recent years intensive comparative studies were carried out on the effect of ion implantation on optical properties of A 3 B5 compounds [2][3][4][5]. In these investigations the channelling techniques, the ellipsometry, and the measurements of light transmission near the fundamental absorption edge were used.…”

Section: Introductionmentioning

confidence: 99%

Effect of Thermal Annealing on Optical Properties of Implanted Gaas

1999

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GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10 16 cm -2 indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k r corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.

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Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometry

Cited by 32 publications

References 23 publications

Surface roughness in XeF2 etching of a-Si∕c-Si(100)

Surface roughness in XeF2 etching of a-Si∕c-Si(100)

Influence of ion beam on optical properties of GaAs: Calculation using the fractional‐derivative‐spectrum method

Effect of Thermal Annealing on Optical Properties of Implanted Gaas

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