Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO2 etching

Noda, Shuichi; Ozawa, Nobuo; Kinoshita, Takashi; Tsuboi, Hideo; Kawashima, Kenji; Hikosaka, Yukinobu; Kinoshita, Keizo; Sekine, Makoto

doi:10.1016/s0040-6090(00)01150-0

Cited by 15 publications

(7 citation statements)

References 9 publications

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“…5,6 The fact that the deposition rate of the a-C:F film increased as the plasma density of fluorocarbon plasma increased is understandable based on our results. 11 Therefore, we believe that etching performance is strongly affected by surface modifications.…”

Section: Letters Transitional Change To Amorphous Fluorinated Carbon supporting

confidence: 60%

“…[2][3][4] In actual etching processes with Ar-diluted c-C 4 F 8 plasma, half of the incident ions on the surface were carbon monofluoride (CF 1 ϩ ) with accelerating energies ranging from eV to keV. 5,6 Thus, the interaction of the CF 1 ϩ ions is of particular interest. In a previous beam study, it was reported that the etching yield of SiO 2 using incident CF 1 ϩ ions with an energy of 400 eV depended on the ion dose.…”

Section: Letters Transitional Change To Amorphous Fluorinated Carbon mentioning

confidence: 99%

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Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces

Ishikawa

Karahashi

Tsuboi

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We have studied both the etching of SiO2 film and the growth of an amorphous fluorinated carbon (a-C:F) film by mass-analyzed fluorocarbon ion irradiation. This experiment was done in an ultrahigh vacuum with a pressure of 10−7 Pa even during irradiation. When using a carbon monoflouride (CF1+) ion with an energy of 300 eV to irradiate, it was found that SiO2 film a few nm thick was initially etched away. Then, an a-C:F film was continuously deposited on the SiO2 surface as the ion dose exceeded about 5×1016 cm−2. Using in situ x-ray photoelectron spectroscopy analysis, it was determined that carbon accumulates on the surface at this early stage as the ion dose increases, so that this transition is resulted by the surface modification on which the CF1+ ion itself irradiates the SiO2 surface. Especially in highly ionized fluorocarbon plasmas, surface conditions such as the carbon concentration affect possibly etching performance.

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Section: Letters Transitional Change To Amorphous Fluorinated Carbon supporting

confidence: 60%

Section: Letters Transitional Change To Amorphous Fluorinated Carbon mentioning

confidence: 99%

Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces

Ishikawa

Karahashi

Tsuboi

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Noda et al reported that the ions that penetrated real contact holes with a diameter of 0.2 μm fabricated on a micro-capillary plate were directly measured by using an electrically floated quadruple mass spectrometer. 142) The charge density at the bottom was monitored using the capillary-hole method. 143,144) The angular distributions of energetic neutrals and ions were analyzed.…”

Section: 5mentioning

confidence: 99%

Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies

Kambara

Kawaguchi

Lee

et al. 2022

Jpn. J. Appl. Phys.

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Low-temperature plasma processing technologies is essential for material synthesis, device fabrication, and surface treatment. The development of plasma-related products and services requires an understanding of the multiscale complex behaviors of plasma and the hierarchical integration of plasma generation, energy and mass transports through sheath region, surface reactions, and other processes. The importance of science-based and data-driven approaches to controlling systems is argued. The state-of-the-art of deep learning, machine learning, and artificial intelligence in low-temperature plasma science and technology is reviewed. In this review, the requirements and challenges for plasma parameter prediction and processing recipe discovery are asserted by researchers in the fields of material science and plasma processing. It also outlined a science-based, data-driven approach for development of virtual metrology in plasma processes.

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“…The phenomena in deep and high-aspect-contact holes [37] are not well understood yet. Therefore, we developed a real-contacthole-sized (0.2-0.3 µm diameter) micro-capillary plate (MCP) for measuring the incident fluxes passed through the deep holes [38]. Comparing the data with that derived from an ion-transportation simulation could reveal the amount of energy and current loss when ions were traveling in a deep hole.…”

Section: Phenomena In Deep Holementioning

confidence: 99%

Study for plasma etching of dielectric film in semiconductor device manufacturing. Review of ASET research project

Sekine

2002

Pure and Applied Chemistry

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Conventional developments were conducted in a very empirical way, such as a trial and error with many speculations using qualitative data. This approach requires more and more resources and time for the development of future devices with a design rule below 100 nm in the system on a chip (SOC) era. It is necessary to establish a systematic methodology for process development and qualification. ASET Plasma Laboratory had been found to research a basis for the systematic development of the plasma etching technology. Fluorocarbon (CF) plasma for the etching of high-aspect-ratio contact holes in SiO 2 was investigated intensively in the 5-year program that finished in March 2001. They introduced 5 plasma sources that can etch 0.1-µm contact holes on a 200-mm wafer in production, and state-of-the-art diagnostics tools for the plasma and etched surface. The SiO 2 etch mechanism was revealed from the etch species generation to the reaction in a deep hole. The number of electron collisions to fluorocarbon gas molecule is proposed as an important parameter to control the gas dissociation and etch species flux to the surface. An etch reaction model was also proposed using the estimated-surface-reaction probability that is a function of ion energy and CF polymer thickness that reduces the net ion energy to the reaction layer. The CF polymer thickness was determined by a balance equation of generation term (radical fluxes) and loss terms (etching by ions, radicals, and out-flux oxygen from SiO 2 ). A program was developed and successfully predicts the etch rates of Si-containing materials, including organic dielectrics. Requirements for the next-generation plasma etch tools are also discussed.

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Investigation of ion transportation in high-aspect-ratio holes from fluorocarbon plasma for SiO2 etching

Cited by 15 publications

References 9 publications

Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces

Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces

Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies

Study for plasma etching of dielectric film in semiconductor device manufacturing. Review of ASET research project

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